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SN54ALS232AFK

Texas Instruments

SN54ALS232AFK by Texas Instruments

SN54ALS232AFK by Texas Instruments is a 16x4 FIFO chip carrier with 3-STATE output, operating at 25 MHz with a cycle time of 40 ns. It has a synchronous mode and operates b/w -55 to 125 °C. Ideal for military-grade applications requiring fast parallel memory access.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,929 parts In-Stock

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3,929

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Vyrian

USA . 3,923 parts In-Stock

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3,923

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,346 parts In-Stock

1+ parts

$2.457

100+ parts

-

1k+ parts

$2.951

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1,346

$2.457

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$2.951

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DigiPath Technology Company

USA . 45 parts In-Stock

1+ parts

$2.706

100+ parts

$2.489

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45

$2.706

$2.489

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ChromeModa Solutions

Germany . 5,618 parts In-Stock

1+ parts

$2.761

100+ parts

$2.264

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5,618

$2.761

$2.264

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IDEA Electronic Components Group

UK . 153 parts In-Stock

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$2.761

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$2.485

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153

$2.761

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$2.485

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AZTECH Wire

Italy . 893 parts In-Stock

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$10.377

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893

$10.377

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One Stop Electronics

USA . 703 parts In-Stock

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$28.000

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703

$28.000

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Corphita

USA . 2,990 parts In-Stock

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2,990

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Overview

Elevate your electronics with the SN54ALS232AFK by Texas Instruments, a top-tier FIFO memory IC that boasts unparalleled quality and reliability. Manufactured using cutting-edge technology, this chip carrier device is ideal for applications requiring fast data transfer speeds and efficient storage capabilities. With a synchronous operating mode and 3-STATE output characteristics, this MILITARY-grade component ensures seamless performance even in extreme conditions. Say goodbye to delays and hello to seamless operation with the SN54ALS232AFK - your gateway to enhanced efficiency and productivity.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durability and reliability in various operating conditions.

Cycle Time: 40 ns

A fast cycle time ensures efficient and quick data processing.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage making it compatible with many systems.

Maximum Operating Temperature: 125 °C

Can withstand high operating temperatures, suitable for industrial applications.

Technology: TTL

Uses TTL technology known for its reliability and simplicity.

Memory Density: 64 bit

Provides ample storage capacity for data handling.

Output Enable: YES

Allows control over the output, enhancing flexibility in operation.

Technical Specifications

FIFO SN54ALS232AFK attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

FALL-THROUGH TIME 24NS

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

S-CQCC-N20

Length:

8.89 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

20

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

LCC20,.35SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.03 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.89 mm

Trade Compliance

SN54ALS232AFK Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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