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SN74ABT7820-20PNR

Texas Instruments

SN74ABT7820-20PNR by Texas Instruments

SN74ABT7820-20PNR by Texas Instruments is a FIFO with 512x18 organization, operating at 5V. It features a cycle time of 20ns, synchronous mode, and 3-STATE output characteristics. Ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,406 parts In-Stock

1+ parts

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4,406

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Vyrian

USA . 3,325 parts In-Stock

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3,325

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,176 parts In-Stock

1+ parts

$1.997

100+ parts

$185.467

1k+ parts

$1.797

10k+ parts

-

1,176

$1.997

$185.467

$1.797

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DigiPath Technology Company

USA . 791 parts In-Stock

1+ parts

$2.199

100+ parts

-

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791

$2.199

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ChromeModa Solutions

Germany . 3,866 parts In-Stock

1+ parts

$2.244

100+ parts

$1.840

1k+ parts

-

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3,866

$2.244

$1.840

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IDEA Electronic Components Group

UK . 2,009 parts In-Stock

1+ parts

$2.244

100+ parts

-

1k+ parts

$2.020

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2,009

$2.244

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$2.020

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AZTECH Wire

Italy . 317 parts In-Stock

1+ parts

$5.759

100+ parts

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317

$5.759

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One Stop Electronics

USA . 590 parts In-Stock

1+ parts

$12.000

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590

$12.000

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Corphita

USA . 365 parts In-Stock

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365

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Overview

Unlock seamless data transfer with the SN74ABT7820-20PNR by Texas Instruments. This FIFO device, designed with the highest quality materials and cutting-edge BICMOS technology, offers a reliable solution for managing data in various applications. With a fast cycle time of 20 ns and 512X18 organization, this chip ensures efficient data handling while providing 3-STATE output characteristics. Perfect for commercial-grade projects, this low-profile, fine-pitch flatpack boasts a wide operating voltage range of 4.5V to 5.5V. Elevate your designs with the SN74ABT7820-20PNR and experience unparalleled performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the FIFO, making it reliable for long-term use.

Surface Mount: YES

Surface mount technology allows for easy installation and space-saving design, making it suitable for compact electronic devices.

Cycle Time: 20 ns

Fast cycle time of 20 ns ensures quick data transfer and processing speed, ideal for high-performance applications.

Package Shape: SQUARE

Square package shape allows for efficient PCB layout and space utilization, making it convenient for integration into electronic systems.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination between data inputs and outputs, which is essential for reliable communication and data handling.

Nominal Supply Voltage / Vsup (V): 5

5V supply voltage is common and easily accessible, suitable for a wide range of applications and power sources.

No. of Terminals: 80

Having 80 terminals allows for versatile connectivity options, enabling the FIFO to interface with multiple other components or systems.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Flatpack, low profile, and fine pitch package style enhances space efficiency and facilitates smooth PCB assembly, making it a great choice for compact designs.

Maximum Operating Temperature: 70 °C

High maximum operating temperature of 70°C ensures reliable performance under varying environmental conditions, making it suitable for industrial and commercial applications.

Organization: 512X18

512x18 organization offers a large memory capacity and wide data width for efficient data storage and retrieval, essential for handling large volumes of information.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for flexible control of the output signal, providing options for high impedance states and optimizing power consumption.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature of 0°C ensures functionality in challenging environments or during startup conditions, enhancing the overall reliability of the FIFO.

Terminal Position: QUAD

Quad terminal position offers better stability and connectivity, reducing the risk of signal interference or disconnection, ideal for high-speed data transmission.

Maximum Seated Height: 1.6 mm

Low maximum seated height of 1.6 mm allows for slim and compact device designs, suitable for applications with space constraints.

Width: 12 mm

Narrow width of 12 mm enables easy integration into various electronic systems and PCB layouts, providing flexibility in design options.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage of 4.5V ensures compatibility with a wide range of power sources and reduces power consumption, contributing to energy efficiency.

Length: 12 mm

Compact length of 12 mm saves space on the PCB and facilitates a sleek and streamlined device design, appealing for modern electronic products.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable performance in standard operating conditions and environments, suitable for a wide range of commercial applications.

Technology: BICMOS

BICMOS technology combines the benefits of bipolar and CMOS technologies, offering high-speed operation and low power consumption, enhancing the overall efficiency of the FIFO.

Parallel or Serial: PARALLEL

Parallel configuration allows for simultaneous data transfer and processing, enabling fast and efficient operation, beneficial for applications requiring real-time data handling.

Terminal Form: GULL WING

Gull wing terminal form provides secure and reliable connections, reducing the risk of signal loss or damage during operation, ensuring data integrity.

No. of Words: 512 words

512 words memory capacity offers ample storage space for data, suitable for applications with high data processing requirements or large datasets.

Memory Width: 18

Memory width of 18 bits allows for efficient data handling and processing, accommodating a wide range of data types and formats effectively.

Terminal Pitch: 0.5 mm

Small terminal pitch of 0.5 mm facilitates high-density integration and compact PCB layout, enhancing the overall space efficiency of the system.

No. of Words Code: 512

512 words code provides a unique identification or addressing system for data storage and retrieval, ensuring accurate and efficient data management.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V allows for compatibility with higher voltage power sources, providing flexibility in the operating conditions and power supply options.

Memory Density: 9216 bit

High memory density of 9216 bits offers substantial storage capacity in a compact form factor, suitable for applications requiring extensive data storage and processing capabilities.

Output Enable: YES

Output enable feature enables control over the output signal, allowing for efficient data transfer and processing by activating or deactivating the output as needed.

Maximum Access Time: 13.5 ns

Short maximum access time of 13.5 ns ensures quick data retrieval and response, facilitating fast operation and reducing latency in data processing tasks.

Technical Specifications

FIFO SN74ABT7820-20PNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13.5 ns

Additional Features:

BYPASS XCVR

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G80

Length:

12 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

12 mm

Trade Compliance

SN74ABT7820-20PNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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