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5962-9562801QYX

Texas Instruments

5962-9562801QYX by Texas Instruments

Texas Instruments' 5962-9562801QYX FIFO operates at 20ns cycle time with 512x36 organization. Ideal for military applications, it features a ceramic, metal-sealed co-fired package and synchronous operating mode. With a memory density of 18432 bits, this parallel CMOS technology device has a temperature range from -55 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,151 parts In-Stock

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Digiode

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Parana Technologies

USA . 8 parts In-Stock

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$2.439

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$2.935

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DigiPath Technology Company

USA . 1,982 parts In-Stock

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$2.685

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$2.470

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ChromeModa Solutions

Germany . 3,657 parts In-Stock

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IDEA Electronic Components Group

UK . 1,134 parts In-Stock

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$2.466

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AZTECH Wire

Italy . 199 parts In-Stock

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$12.989

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One Stop Electronics

USA . 823 parts In-Stock

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Northwest PG Solutions

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Corphita

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Native Components

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Overview

Unlock the power of seamless data flow with the 5962-9562801QYX FIFO from Texas Instruments. With a focus on quality and reliability, Texas Instruments ensures that this ceramic, metal-sealed co-fired FIFO meets the highest standards for performance. Ideal for a wide range of applications, this synchronous operating mode device offers a cycle time of just 20 ns, making it perfect for military-grade environments where speed and precision are essential. Experience the value and benefits of smooth data storage and retrieval with this versatile and efficient FIFO solution.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material combination provides durability and reliability, making the product suitable for harsh environments.

Cycle Time: 20 ns

The fast cycle time ensures efficient operation and quick access to data, enhancing overall performance.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination, ideal for applications requiring synchronized data transfers.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, making it an energy-efficient choice.

Memory Width: 36

With a wide memory width, this product can handle large data sets efficiently, ideal for applications with high memory requirements.

Technical Specifications

FIFO 5962-9562801QYX attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Cycle Time:

20 ns

JESD-30 Code:

S-CQFP-F132

Length:

24.13 mm

Memory Density:

18432 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

512X36

Output Enable:

NO

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.81 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

5962-9562801QYX Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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