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SN74ABT3614-30PCBR

Texas Instruments

SN74ABT3614-30PCBR by Texas Instruments

SN74ABT3614-30PCBR by Texas Instruments is a FIFO with 64x36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast data transfer and synchronous operation, suitable for commercial temperature grade environments.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 3,039 parts In-Stock

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Digiode

USA . 2,245 parts In-Stock

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2,245

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Distributors (Availability)

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Parana Technologies

USA . 766 parts In-Stock

1+ parts

$1.901

100+ parts

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$2.439

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766

$1.901

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$2.439

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DigiPath Technology Company

USA . 559 parts In-Stock

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$2.093

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559

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ChromeModa Solutions

Germany . 5,696 parts In-Stock

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$2.136

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$1.752

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IDEA Electronic Components Group

UK . 1,380 parts In-Stock

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$2.136

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$1.922

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$1.922

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One Stop Electronics

USA . 594 parts In-Stock

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$7.000

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$7.000

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AZTECH Wire

Italy . 860 parts In-Stock

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$18.469

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$18.469

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Corphita

USA . 3,198 parts In-Stock

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Overview

Unlock seamless data transfer with the Texas Instruments SN74ABT3614-30PCBR FIFO. Crafted with precision and expertise, this innovative device boasts a unique combination of speed, efficiency, and reliability. Ideal for a wide range of applications, this product offers unparalleled value and performance, making it the perfect choice for customers seeking cutting-edge solutions for their data storage and retrieval needs. Trust in Texas Instruments to deliver quality products that elevate your technological capabilities to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for long-term use.

Surface Mount: YES

Surface mount design allows for easy installation and space-saving in a compact system.

Cycle Time: 30 ns

Fast cycle time ensures quick data transfer and efficient operation.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures accurate timing and synchronization of data.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures consistent performance and reliability.

No. of Terminals: 120

Ample terminals allow for multiple connections and compatibility with different systems.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Flatpack and low profile design with fine pitch ensures space-efficient and sleek integration.

Maximum Operating Temperature: 70 °C

High operating temperature tolerance of 70°C allows for reliable performance even in challenging environments.

Organization: 64X36

Efficient organization of 64 words by 36 memory width for optimal data management.

Output Characteristics: 3-STATE

3-state output characteristics offer versatility and flexibility in data transmission.

Terminal Position: QUAD

Quad terminal position allows for easy connectivity and compatibility with various systems.

Width: 14 mm

Compact width of 14mm for space-saving installation in constrained systems.

Minimum Supply Voltage (Vsup): 4.5 V

Minimum supply voltage of 4.5V ensures stable operation even under low power conditions.

Length: 14 mm

Compact length of 14mm for space-efficient placement in tight spaces.

Temperature Grade: COMMERCIAL

Commercial-grade temperature tolerance for reliable performance in standard operating conditions.

Technology: BICMOS

BICMOS technology offers a balance of high performance and low power consumption for efficient operation.

Parallel or Serial: PARALLEL

Parallel data transmission allows for fast and efficient processing of data.

Terminal Form: GULL WING

Gull wing terminal form for secure and reliable connections in various systems.

No. of Words: 64

64 words capacity for storing and managing data effectively.

Memory Width: 36

Memory width of 36 for efficient data processing and storage.

Terminal Pitch: 0.4 mm

Terminal pitch of 0.4mm for precise and secure connections in compact systems.

No. of Words Code: 64

64 words code for seamless data encoding and decoding.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V ensures safe operation without voltage overload.

Memory Density: 2304 bit

High memory density of 2304 bit for storing and processing large amounts of data efficiently.

Output Enable: YES

Output enable feature for controlling data transmission and enhancing operational flexibility.

Maximum Access Time: 15 ns

Fast maximum access time of 15 ns for quick data retrieval and processing.

Technical Specifications

FIFO SN74ABT3614-30PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

PARITY GENERATOR/CHECKER, MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT3614-30PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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