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5962-9562701QYA

Texas Instruments

5962-9562701QYA by Texas Instruments

The Texas Instruments 5962-9562701QYA is a MILITARY-grade FIFO memory IC with 1KX18 organization, operating at up to 50 MHz clock frequency. It features SYNCHRONOUS operation, 0.635 mm terminal pitch, and a max standby current of 0.0012 Amp. Ideal for high-reliability applications in harsh environments requiring fast data access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,136 parts In-Stock

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7,136

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Digiode

USA . 2,637 parts In-Stock

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2,637

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Distributors (Availability)

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Parana Technologies

USA . 1,596 parts In-Stock

1+ parts

$3.942

100+ parts

-

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$4.414

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1,596

$3.942

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$4.414

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DigiPath Technology Company

USA . 406 parts In-Stock

1+ parts

$4.340

100+ parts

$3.993

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-

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406

$4.340

$3.993

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ChromeModa Solutions

Germany . 1,582 parts In-Stock

1+ parts

$4.429

100+ parts

$3.632

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1,582

$4.429

$3.632

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IDEA Electronic Components Group

UK . 1,162 parts In-Stock

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$4.429

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$3.986

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1,162

$4.429

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$3.986

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AZTECH Wire

Italy . 720 parts In-Stock

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$6.831

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720

$6.831

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One Stop Electronics

USA . 860 parts In-Stock

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$13.000

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860

$13.000

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Corphita

USA . 3,378 parts In-Stock

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Northwest PG Solutions

USA . 2,204 parts In-Stock

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Native Components

USA . 134 parts In-Stock

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Overview

Experience unmatched reliability and performance with the 5962-9562701QYA FIFO by Texas Instruments. Trusted by military-grade applications, this ceramic-metal sealed co-fired package ensures optimal functionality in extreme conditions. With a synchronous operating mode and high clock frequency, this FIFO offers seamless data transfer at lightning speeds. Elevate your system's efficiency and accuracy with the 1Kx18 organization and 18 memory width. Choose Texas Instruments for cutting-edge technology that delivers unparalleled value and precision to meet all your application needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent durability and reliability, making it suitable for military applications or harsh environments.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Screening Level: MIL-PRF-38535 Class Q

Ensures that the product meets stringent military standards for quality and reliability.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage ensures compatibility with common power sources.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Memory Width: 18

Wide memory width allows for efficient data transfer and storage, especially for larger datasets.

Maximum Clock Frequency (fCLK): 50 MHz

High clock frequency enables fast data processing and retrieval, improving overall system performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product reliable and energy-efficient.

Output Enable: YES

The output enable feature allows for convenient control over data output, enhancing flexibility in system design.

Technical Specifications

FIFO 5962-9562701QYA attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Maximum Clock Frequency (fCLK):

50 MHz

JESD-30 Code:

S-CQFP-F68

Length:

12.51 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

68

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX18

Output Enable:

YES

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

DFP

Package Equivalence Code:

QFL68,.5SQ,25

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

3.192 mm

Maximum Standby Current:

.0012 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

12.51 mm

Trade Compliance

5962-9562701QYA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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