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SN74ACT7205L-50DV

Texas Instruments

SN74ACT7205L-50DV by Texas Instruments

SN74ACT7205L-50DV by Texas Instruments is a FIFO memory with 8Kx9 organization, 65ns cycle time, and 15MHz clock frequency. It operates at 5V, has a small outline package style, and is suitable for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,195 parts In-Stock

1+ parts

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3,195

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Digiode

USA . 2,760 parts In-Stock

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2,760

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 683 parts In-Stock

1+ parts

$3.000

100+ parts

-

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683

$3.000

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Parana Technologies

USA . 1,204 parts In-Stock

1+ parts

$3.941

100+ parts

-

1k+ parts

$4.414

10k+ parts

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1,204

$3.941

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$4.414

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DigiPath Technology Company

USA . 1,215 parts In-Stock

1+ parts

$4.339

100+ parts

$3.992

1k+ parts

-

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1,215

$4.339

$3.992

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ChromeModa Solutions

Germany . 3,135 parts In-Stock

1+ parts

$4.428

100+ parts

$3.631

1k+ parts

-

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3,135

$4.428

$3.631

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IDEA Electronic Components Group

UK . 1,269 parts In-Stock

1+ parts

$4.428

100+ parts

-

1k+ parts

$3.985

10k+ parts

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1,269

$4.428

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$3.985

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AZTECH Wire

Italy . 770 parts In-Stock

1+ parts

$12.254

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770

$12.254

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Corphita

USA . 4,943 parts In-Stock

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4,943

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Overview

Unlock seamless data transfer and storage with the SN74ACT7205L-50DV by Texas Instruments, a high-quality FIFO memory solution designed to meet your needs. With proven reliability and precision engineering from Texas Instruments, this device offers unmatched performance and efficiency in various applications. Whether you're looking to optimize your data processing or enhance system speed, this FIFO memory promises value, benefits, and advantages that will take your projects to the next level. Trust Texas Instruments for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy body material provides durability and protection for the internal components of the FIFO, ensuring reliability in a variety of operating conditions.

Cycle Time: 65 ns

Fast cycle time of 65 ns allows for efficient data transfer and processing, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this FIFO compatible with standard power supply configurations, enhancing ease of integration.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this FIFO can perform reliably in a wide range of environmental conditions.

Memory Width: 9

Having a memory width of 9 bits allows for efficient storage and retrieval of data, making this FIFO suitable for a variety of data processing tasks.

Technical Specifications

FIFO SN74ACT7205L-50DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Maximum Clock Frequency (fCLK):

15 MHz

Cycle Time:

65 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

73728 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.765 mm

Trade Compliance

SN74ACT7205L-50DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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