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SN74ABT3613PCBR

Texas Instruments

SN74ABT3613PCBR by Texas Instruments

SN74ABT3613PCBR by Texas Instruments is a FIFO with 64x36 organization, operating at 5V. It features a cycle time of 30ns and synchronous operation, suitable for applications requiring fast data transfer and memory management in commercial-grade environments. The device comes in a square plastic/epoxy package with surface mount capability, making it ideal for compact electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,846 parts In-Stock

1+ parts

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4,846

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Vyrian

USA . 4,222 parts In-Stock

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4,222

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 317 parts In-Stock

1+ parts

$4.506

100+ parts

-

1k+ parts

$4.949

10k+ parts

-

317

$4.506

-

$4.949

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DigiPath Technology Company

USA . 1,147 parts In-Stock

1+ parts

$4.962

100+ parts

$4.565

1k+ parts

-

10k+ parts

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1,147

$4.962

$4.565

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ChromeModa Solutions

Germany . 5,948 parts In-Stock

1+ parts

$5.063

100+ parts

$4.152

1k+ parts

-

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5,948

$5.063

$4.152

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IDEA Electronic Components Group

UK . 947 parts In-Stock

1+ parts

$5.063

100+ parts

-

1k+ parts

$4.557

10k+ parts

-

947

$5.063

-

$4.557

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AZTECH Wire

Italy . 421 parts In-Stock

1+ parts

$9.924

100+ parts

-

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421

$9.924

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One Stop Electronics

USA . 289 parts In-Stock

1+ parts

$27.000

100+ parts

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289

$27.000

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Corphita

USA . 275 parts In-Stock

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275

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Overview

Enhance your electronic projects with the SN74ABT3613PCBR by Texas Instruments, a top-quality FIFO device designed for optimal performance and reliability. With Texas Instruments' renowned reputation for excellence in manufacturing, this FIFO offers seamless data storage and retrieval capabilities, making it ideal for a wide range of applications. Experience the value of faster cycle times, efficient synchronous operation, and versatile packaging options that cater to your specific needs. Elevate your projects with the SN74ABT3613PCBR and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for the product.

Surface Mount: YES

Being surface mountable makes it easier for integration into various electronic designs.

Cycle Time: 30 ns

The fast cycle time of 30 ns ensures efficient data processing.

Operating Mode: SYNCHRONOUS

Synchronous operation guarantees accurate and coordinated data transfer.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources.

No. of Terminals: 120

Having 120 terminals allows for multiple connection points and flexibility in circuit connectivity.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliability even in challenging environmental conditions.

Technology: BICMOS

Utilizing BiCMOS technology combines the advantages of both bipolar and CMOS technologies, offering high performance and low power consumption.

No. of Words: 64 words

With 64 words, the product can store and process a significant amount of data efficiently.

Memory Width: 36

Having a memory width of 36 ensures compatibility and efficient handling of data.

Technical Specifications

FIFO SN74ABT3613PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT3613PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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