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5962-9560801QYA

Texas Instruments

5962-9560801QYA by Texas Instruments

The Texas Instruments 5962-9560801QYA FIFO features a cycle time of 20ns, operating at a supply voltage of 5V. With an organization of 1KX36 and memory density of 36864 bits, it is ideal for military applications requiring fast access times and synchronous operation. The device is designed with a ceramic, glass-sealed package body material and operates within a wide temperature range from -55 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,871 parts In-Stock

1+ parts

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2,871

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Digiode

USA . 850 parts In-Stock

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850

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 997 parts In-Stock

1+ parts

$0.117

100+ parts

-

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$0.112

997

$0.117

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$0.112

Northwest PG Solutions

USA . 681 parts In-Stock

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$0.129

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$0.113

681

$0.129

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$0.113

Parana Technologies

USA . 491 parts In-Stock

1+ parts

$2.771

100+ parts

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$3.255

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491

$2.771

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$3.255

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ChromeModa Solutions

Germany . 1,539 parts In-Stock

1+ parts

$3.113

100+ parts

$2.553

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1,539

$3.113

$2.553

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IDEA Electronic Components Group

UK . 807 parts In-Stock

1+ parts

$3.113

100+ parts

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$2.802

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807

$3.113

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$2.802

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One Stop Electronics

USA . 851 parts In-Stock

1+ parts

$4.000

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851

$4.000

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AZTECH Wire

Italy . 384 parts In-Stock

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$9.699

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$9.699

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Corphita

USA . 4,584 parts In-Stock

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DigiPath Technology Company

USA . 1,159 parts In-Stock

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$2.807

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1,159

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$2.807

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Overview

Elevate your project with the 5962-9560801QYA FIFO by Texas Instruments, a top-tier manufacturer known for delivering high-quality components. This versatile device is perfect for a wide range of applications, offering fast cycle times and synchronous operation. With its military-grade screening level and durable ceramic, glass-sealed body, you can trust this FIFO to perform reliably in any environment. Experience the value and benefits of seamless data storage and retrieval, enhanced system performance, and peace of mind knowing you have a top-of-the-line component powering your project.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed body material ensures durability and reliability in various operating conditions.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for quick data access and processing, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this FIFO is compatible with standard voltage requirements in many electronic systems.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise timing and coordination of data transfers, enhancing system performance.

Temperature Grade: MILITARY

Built to MILITARY grade standards, this FIFO is designed to withstand harsh environmental conditions and ensure long-term reliability.

Technical Specifications

FIFO 5962-9560801QYA attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Cycle Time:

20 ns

JESD-30 Code:

S-GQFP-F132

JESD-609 Code:

e0

Length:

24.13 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX36

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

QFF

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535 Class Q

Maximum Seated Height:

3.81 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

FLAT

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

5962-9560801QYA Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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