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72V263L7-5BCGI8

Renesas Electronics

72V263L7-5BCGI8 by Renesas Electronics

The Renesas Electronics 72V263L7-5BCGI8 is a FIFO memory with 8Kx18 organization, operating at 3.3V. It features a cycle time of 7.5ns and offers parallel access mode. This low-profile grid array package is ideal for industrial applications requiring fast data processing and high memory density.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 1,323 parts In-Stock

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Ampacity Inc.

Singapore . 334 parts In-Stock

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$11.000

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AZTECH Wire

Italy . 852 parts In-Stock

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$18.690

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Continental Prestige Electronics

USA . 5,393 parts In-Stock

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Argo Parts USA

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Microchip USA

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Bastille Electronics

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Overview

Experience seamless data transfer with the Renesas Electronics 72V263L7-5BCGI8 FIFO, delivering unparalleled quality and reliability. Renowned for its cutting-edge technology and industrial-grade construction, this FIFO device boasts a wide range of applications, ensuring optimal performance in any setting. With a low profile grid array package and synchronous operating mode, customers can enjoy lightning-fast cycle times and efficient data processing. Elevate your projects with the exceptional value and benefits offered by the Renesas Electronics 72V263L7-5BCGI8 FIFO.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for long-term use.

Cycle Time: 7.5 ns

Ensures fast and efficient data processing.

Operating Mode: SYNCHRONOUS

Allows for synchronized data transfers, enhancing performance.

Nominal Supply Voltage / Vsup (V): 3.3

Optimal voltage for efficient operation and power consumption.

Memory Width: 18

Provides a wider memory width for storing more data efficiently.

Maximum Access Time: 5 ns

Enables quick access to stored data for improved efficiency.

Technical Specifications

FIFO 72V263L7-5BCGI8 attributes and parameters. Explore more FIFO devices from Renesas Electronics

Specs

Maximum Access Time:

5 ns

Additional Features:

IT CAN ALSO BE CONFIGURED AS 16K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

Cycle Time:

7.5 ns

JESD-30 Code:

S-PBGA-B100

JESD-609 Code:

e1

Length:

11 mm

Memory Density:

147456 bit

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.5 mm

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

11 mm

Trade Compliance

72V263L7-5BCGI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Renesas Electronics

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