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SN54ALS2232JD

Texas Instruments

SN54ALS2232JD by Texas Instruments

SN54ALS2232JD by Texas Instruments is a 64x8 FIFO memory IC with TTL technology, operating at -55 to 125°C. It has 24 terminals in an in-line package style, suitable for military-grade applications requiring asynchronous operation at a nominal voltage of 5V.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,967 parts In-Stock

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1,967

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Digiode

USA . 581 parts In-Stock

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581

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Distributors (Availability)

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Parana Technologies

USA . 1,935 parts In-Stock

1+ parts

$1.948

100+ parts

-

1k+ parts

$2.481

10k+ parts

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1,935

$1.948

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$2.481

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DigiPath Technology Company

USA . 786 parts In-Stock

1+ parts

$2.145

100+ parts

$1.974

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-

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786

$2.145

$1.974

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ChromeModa Solutions

Germany . 6,830 parts In-Stock

1+ parts

$2.189

100+ parts

$1.795

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6,830

$2.189

$1.795

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IDEA Electronic Components Group

UK . 706 parts In-Stock

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$2.189

100+ parts

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$1.970

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706

$2.189

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$1.970

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One Stop Electronics

USA . 1,584 parts In-Stock

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$8.000

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1,584

$8.000

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AZTECH Wire

Italy . 253 parts In-Stock

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$8.384

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253

$8.384

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Corphita

USA . 2,896 parts In-Stock

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2,896

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Overview

Experience seamless data transfer with the Texas Instruments SN54ALS2232JD FIFO, designed for military-grade applications. This rectangular ceramic package boasts reliability and high performance thanks to Texas Instruments' renowned quality standards. Ideal for asynchronous operations, this 64x8 memory IC delivers unparalleled value with its dual-terminal configuration and wide operating temperature range. Say goodbye to data bottlenecks and enjoy smooth operation with the SN54ALS2232JD FIFO from Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal stability and durability, making the FIFO resistant to temperature changes and mechanical stress.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent and simultaneous read and write accesses, enhancing the efficiency and speed of data transfer in the FIFO.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard supply voltage of 5V, making it compatible with a wide range of systems and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, the FIFO can withstand harsh environmental conditions and ensure reliable performance.

Technology: TTL

Utilizing TTL technology ensures fast and reliable data transmission, making the FIFO suitable for applications requiring high-speed operations.

Technical Specifications

FIFO SN54ALS2232JD attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

8

No. of Terminals:

24

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

64X8

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5

Qualification:

Not Qualified

Sub-Category:

FIFOs

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

TTL

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN54ALS2232JD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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