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7201LA25SOI8

Integrated Device Technology

7201LA25SOI8 by Integrated Device Technology

7201LA25SOI8 by Integrated Device Technology is a FIFO memory with 512x9 organization, operating at 28.5 MHz clock frequency and 35 ns cycle time. It is designed for industrial applications requiring fast data storage and retrieval in a compact small outline package.

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Overview

Unlock seamless data transfer with the 7201LA25SOI8 by Integrated Device Technology. Designed with top-notch quality and reliability, this FIFO device is perfect for a wide range of applications. With its advanced technology and industrial-grade performance, customers can trust in its efficiency and speed. Experience the benefits of fast cycle times, low power consumption, and easy installation. Elevate your projects with the value and advantages that this product brings, setting you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable housing for the product.

Cycle Time: 35 ns

Allows for fast data transfer and efficient operation.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard voltage levels, making it easy to integrate into existing systems.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperature environments, suitable for industrial use.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Maximum Clock Frequency (fCLK): 28.5 MHz

Supports high-speed clock frequencies for efficient data processing.

Memory Width: 9

Provides a wide memory width for storing and accessing data efficiently.

Technical Specifications

FIFO 7201LA25SOI8 attributes and parameters. Explore more FIFO devices from Integrated Device Technology

Specs

Maximum Access Time:

25 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

28.5 MHz

Cycle Time:

35 ns

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e0

Length:

18.3642 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

9

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512X9

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.048 mm

Maximum Standby Current:

.0005 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

125 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8.763 mm

Trade Compliance

7201LA25SOI8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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