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SN74ACT7205L-25DV

Texas Instruments

SN74ACT7205L-25DV by Texas Instruments

SN74ACT7205L-25DV by Texas Instruments is a FIFO with 8KX9 organization, 35 ns cycle time, and 28.5 MHz clock frequency. It operates at 5V, has a memory density of 73728 bit, and is ideal for commercial applications requiring fast data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,028 parts In-Stock

1+ parts

-

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2,028

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Vyrian

USA . 1,198 parts In-Stock

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1,198

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 868 parts In-Stock

1+ parts

$4.792

100+ parts

-

1k+ parts

$5.299

10k+ parts

-

868

$4.792

-

$5.299

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ChromeModa Solutions

Germany . 4,546 parts In-Stock

1+ parts

$5.384

100+ parts

$4.415

1k+ parts

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4,546

$5.384

$4.415

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IDEA Electronic Components Group

UK . 660 parts In-Stock

1+ parts

$5.384

100+ parts

-

1k+ parts

$4.846

10k+ parts

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660

$5.384

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$4.846

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One Stop Electronics

USA . 1,489 parts In-Stock

1+ parts

$10.000

100+ parts

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1,489

$10.000

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AZTECH Wire

Italy . 870 parts In-Stock

1+ parts

$17.189

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870

$17.189

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Corphita

USA . 4,564 parts In-Stock

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4,564

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DigiPath Technology Company

USA . 941 parts In-Stock

1+ parts

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100+ parts

$4.854

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941

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$4.854

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Overview

Unlock seamless data transfer and storage with the SN74ACT7205L-25DV FIFO by Texas Instruments. Known for their top-quality products, Texas Instruments has designed this FIFO device to provide reliable and efficient performance in a wide range of applications. With a cycle time of just 35 ns and a maximum clock frequency of 28.5 MHz, this FIFO ensures quick and smooth data processing. Whether you're working on embedded systems, telecommunications, or industrial automation, this product offers the value, benefits, and advantages that customers need to optimize their projects. Experience the difference with Texas Instruments SN74ACT7205L-25DV FIFO today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FIFO, ensuring long-lasting performance.

Cycle Time: 35 ns

A fast cycle time of 35 ns allows for efficient data transfer and processing, making this FIFO ideal for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V, this FIFO is compatible with many systems and power sources.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this FIFO can withstand heat and operate reliably in various environments.

Technology: CMOS

Utilizing CMOS technology makes this FIFO energy-efficient and offers fast operation speeds, contributing to overall system performance.

Technical Specifications

FIFO SN74ACT7205L-25DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Maximum Clock Frequency (fCLK):

28.5 MHz

Cycle Time:

35 ns

JESD-30 Code:

R-PDSO-G28

Length:

18.365 mm

Memory Density:

73728 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.05 mm

Maximum Standby Current:

.002 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

120 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8.765 mm

Trade Compliance

SN74ACT7205L-25DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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