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SN74ACT3642-20PCBR

Texas Instruments

SN74ACT3642-20PCBR by Texas Instruments

SN74ACT3642-20PCBR by Texas Instruments is a FIFO with 1KX36 organization, 20 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast data transfer and storage, such as networking equipment and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,694 parts In-Stock

1+ parts

-

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4,694

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Vyrian

USA . 3,006 parts In-Stock

1+ parts

-

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3,006

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 32 parts In-Stock

1+ parts

$4.065

100+ parts

-

1k+ parts

$4.530

10k+ parts

-

32

$4.065

-

$4.530

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ChromeModa Solutions

Germany . 5,361 parts In-Stock

1+ parts

$4.567

100+ parts

$3.745

1k+ parts

-

10k+ parts

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5,361

$4.567

$3.745

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IDEA Electronic Components Group

UK . 1,790 parts In-Stock

1+ parts

$4.567

100+ parts

-

1k+ parts

$4.110

10k+ parts

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1,790

$4.567

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$4.110

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AZTECH Wire

Italy . 432 parts In-Stock

1+ parts

$6.582

100+ parts

-

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432

$6.582

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One Stop Electronics

USA . 1,361 parts In-Stock

1+ parts

$10.000

100+ parts

-

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1,361

$10.000

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Corphita

USA . 3,843 parts In-Stock

1+ parts

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3,843

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DigiPath Technology Company

USA . 1,162 parts In-Stock

1+ parts

-

100+ parts

$4.118

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1,162

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$4.118

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Overview

Enhance your electronic designs with the SN74ACT3642-20PCBR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality FIFO products that offer superior performance and reliability. This FIFO device is perfect for applications requiring fast data transfer and storage, thanks to its synchronous operation and 20 ns cycle time. With a compact square package design and 3-state output characteristics, this device is ideal for space-constrained designs. Trust Texas Instruments to provide you with the cutting-edge technology you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Cycle Time: 20 ns

The fast cycle time of 20 ns ensures quick data processing and efficient operation.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures compatibility with standard power sources.

No. of Terminals: 120

The large number of terminals allows for versatile connectivity options and integration with other devices.

Memory Width: 36

The 36-bit memory width provides ample storage capacity for data handling and processing.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, increasing the product's efficiency and reliability.

Output Enable: YES

The output enable feature allows for control over when data is outputted, adding flexibility to the product's functionality.

Technical Specifications

FIFO SN74ACT3642-20PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Additional Features:

MAILBOX

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ACT3642-20PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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