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SN74ACT2235-40PM

Texas Instruments

SN74ACT2235-40PM by Texas Instruments

SN74ACT2235-40PM by Texas Instruments is a FIFO memory with 1Kx9 organization, operating at 40ns cycle time and 25MHz clock frequency. It features a 64-terminal flatpack package suitable for commercial applications requiring bi-directional FIFO memory with 3-state output characteristics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,727 parts In-Stock

1+ parts

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3,727

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Digiode

USA . 1,970 parts In-Stock

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1,970

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 967 parts In-Stock

1+ parts

$5.034

100+ parts

-

1k+ parts

$5.593

10k+ parts

-

967

$5.034

-

$5.593

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ChromeModa Solutions

Germany . 6,657 parts In-Stock

1+ parts

$5.656

100+ parts

$4.638

1k+ parts

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10k+ parts

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6,657

$5.656

$4.638

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IDEA Electronic Components Group

UK . 871 parts In-Stock

1+ parts

$5.656

100+ parts

-

1k+ parts

$5.090

10k+ parts

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871

$5.656

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$5.090

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AZTECH Wire

Italy . 730 parts In-Stock

1+ parts

$7.313

100+ parts

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730

$7.313

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One Stop Electronics

USA . 872 parts In-Stock

1+ parts

$14.000

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872

$14.000

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Corphita

USA . 1,617 parts In-Stock

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1,617

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DigiPath Technology Company

USA . 1,365 parts In-Stock

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100+ parts

$5.099

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1,365

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$5.099

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Overview

Experience the seamless performance and reliability of the Texas Instruments SN74ACT2235-40PM FIFO memory IC. Designed with cutting-edge technology and high-quality materials, this product offers fast cycle time, low power consumption, and a wide operating temperature range. Whether used in telecommunications, industrial automation, or data processing applications, this FIFO device provides unmatched efficiency and precision. Trust in Texas Instruments to deliver innovative solutions that exceed your expectations and enhance your projects. Elevate your designs with the SN74ACT2235-40PM and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the internal components of the FIFO, making it a reliable option for various applications.

Cycle Time: 40 ns

The fast cycle time of 40 ns ensures efficient operation and quick data retrieval, enhancing the overall performance of the FIFO.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V, this FIFO is compatible with standard power sources and can easily integrate into existing systems.

Organization: 1KX9

With an organization of 1KX9, this FIFO can handle a large number of data inputs and outputs simultaneously, making it suitable for complex data processing tasks.

Maximum Clock Frequency (fCLK): 25 MHz

The high maximum clock frequency of 25 MHz allows for fast data transfer rates, making this FIFO ideal for applications that require quick data processing.

Memory Density: 9216 bit

With a memory density of 9216 bits, this FIFO can store a large amount of data, making it suitable for applications that require extensive data storage capabilities.

Technical Specifications

FIFO SN74ACT2235-40PM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Additional Features:

BYPASS-XCVR

Maximum Clock Frequency (fCLK):

25 MHz

Cycle Time:

40 ns

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Memory Density:

9216 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74ACT2235-40PM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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