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CD40105BF

Texas Instruments

CD40105BF by Texas Instruments

CD40105BF by Texas Instruments is a 16x4 FIFO memory IC with 3-STATE output characteristics. It operates in parallel mode, with a max access time of 420ns and supports a supply voltage range of 3V to 18V. This CMOS technology device is ideal for military-grade applications requiring fast data storage and retrieval.

Median Price

$18.113

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

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Rochester

USA . 131 parts In-Stock

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$14.490

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$12.960

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$12.200

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$12.200

DigiKey

USA . 131 parts In-Stock

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$19.060

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Verical

USA . 131 parts In-Stock

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$18.113

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$16.200

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$15.250

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$15.250

Master Electronics

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Freelance Electronics

USA . 4 parts In-Stock

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$2.596

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Bristol Electronics

USA . 2,486 parts In-Stock

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$7.280

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$3.154

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$2.985

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$7.280

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Digiode

USA . 4,596 parts In-Stock

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$13.290

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Vyrian

USA . 6,799 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,237 parts In-Stock

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LWI Electronics Inc

India . 160 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 90 parts In-Stock

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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R&J Components

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Sinequanon

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Prism Electronics

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GES GmbH

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Q Components

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Northwest PG Solutions

USA . 2,093 parts In-Stock

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$2.853

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$2.853

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Parana Technologies

USA . 1,223 parts In-Stock

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$5.314

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$5.956

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DigiPath Technology Company

USA . 1,143 parts In-Stock

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$5.852

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ChromeModa Solutions

Germany . 6,652 parts In-Stock

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$5.971

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$4.896

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IDEA Electronic Components Group

UK . 1,049 parts In-Stock

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$5.971

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$5.374

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Ampacity Inc.

Singapore . 99 parts In-Stock

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$11.890

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Corphita

USA . 4,757 parts In-Stock

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$12.591

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Supply Digital

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Authorized Procurement Solutions

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Microchip USA

USA . 1,797 parts In-Stock

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Kepictronics

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Native Components

USA . 325 parts In-Stock

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A-Plus Industry Inc.

USA . 24 parts In-Stock

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Overview

Experience seamless data transfer and efficient storage with the CD40105BF FIFO memory IC by Texas Instruments. Known for their high-quality components, Texas Instruments delivers reliability and performance in every product. The CD40105BF is perfect for applications requiring fast and reliable data buffering, offering customers ease of use and enhanced system functionality. Upgrade your electronics with the value and benefits this FIFO memory IC provides, ensuring optimal performance and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This ensures durability and protection for the internal components of the FIFO, making it suitable for potentially harsh operating environments.

Operating Mode: ASYNCHRONOUS

Allows for independent read and write operations, increasing flexibility and efficiency in data transfer.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement, making it compatible with most power supplies.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for industrial and military applications.

No. of Words: 16 words

Provides ample storage capacity for data transfer and buffering.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the FIFO.

Output Enable: YES

Ability to enable or disable output allows for more control over data flow, improving data management.

Maximum Access Time: 420 ns

Fast access time ensures quick retrieval of data, making it suitable for time-sensitive applications.

Technical Specifications

FIFO CD40105BF attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

420 ns

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD40105BF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-116-8673, 5962011168673, 5962-99-745-9757, 5962997459757

NIIN

011168673, 997459757

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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