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SN74ACT72235-20PAG

Texas Instruments

SN74ACT72235-20PAG by Texas Instruments

SN74ACT72235-20PAG by Texas Instruments is a FIFO with 1KX9 organization, operating at 5V. It features a cycle time of 20ns, parallel operation, and GULL WING terminals. Ideal for applications requiring fast data transfer in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,399 parts In-Stock

1+ parts

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3,399

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Digiode

USA . 1,720 parts In-Stock

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1,720

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Distributors (Availability)

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One Stop Electronics

USA . 126 parts In-Stock

1+ parts

$3.000

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126

$3.000

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Parana Technologies

USA . 2,300 parts In-Stock

1+ parts

$4.426

100+ parts

-

1k+ parts

$4.850

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2,300

$4.426

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$4.850

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ChromeModa Solutions

Germany . 5,745 parts In-Stock

1+ parts

$4.973

100+ parts

$4.078

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5,745

$4.973

$4.078

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IDEA Electronic Components Group

UK . 1,739 parts In-Stock

1+ parts

$4.973

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$4.476

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1,739

$4.973

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$4.476

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AZTECH Wire

Italy . 693 parts In-Stock

1+ parts

$9.494

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693

$9.494

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DigiPath Technology Company

USA . 1,096 parts In-Stock

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$4.484

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1,096

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$4.484

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Corphita

USA . 510 parts In-Stock

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510

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Overview

Unlock seamless data transfer and storage with the SN74ACT72235-20PAG FIFO from Texas Instruments. Crafted with precision and quality in mind, this FIFO device offers unmatched reliability and performance. Ideal for a wide range of applications, including data buffering and caching, this product ensures smooth operations and efficient data handling. Experience the value and benefits of Texas Instrument's innovative technology with the SN74ACT72235-20PAG, providing you with a competitive edge in your projects. Elevate your designs with this high-quality FIFO solution today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the FIFO.

Surface Mount: YES

Being surface mountable ensures easy integration into circuit boards, making installation and assembly convenient.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for quick data retrieval and processing, making this FIFO ideal for demanding applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures precise and coordinated data transfers within the FIFO, enhancing overall system performance.

Nominal Supply Voltage: 5V

The 5V supply voltage offers stable and reliable power to the FIFO, ensuring consistent operation.

No. of Terminals: 64

With 64 terminals, this FIFO can handle a wide range of input and output connections, making it versatile for various applications.

Organisation: 1KX9

The 1KX9 organization allows for efficient data storage and retrieval within the FIFO, optimizing data processing capabilities.

Technology: CMOS

The CMOS technology used in this FIFO enables low power consumption and high speed operation, making it energy efficient and reliable.

Output Enable: YES

The output enable feature allows for control over data output from the FIFO, enhancing flexibility in data management.

Technical Specifications

FIFO SN74ACT72235-20PAG attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

FALL THRU 22NS

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

10 mm

Trade Compliance

SN74ACT72235-20PAG Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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