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SN74ABT7819-30PNR

Texas Instruments

SN74ABT7819-30PNR by Texas Instruments

SN74ABT7819-30PNR by Texas Instruments is a FIFO with 512x18 organization, operating at 5V. It features a cycle time of 30.03 ns and offers 3-STATE output characteristics. This device is suitable for applications requiring synchronous operation and a memory density of 9216 bit in commercial temperature grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,474 parts In-Stock

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3,474

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Digiode

USA . 1,669 parts In-Stock

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1,669

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 675 parts In-Stock

1+ parts

$2.599

100+ parts

-

1k+ parts

$3.089

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675

$2.599

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$3.089

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DigiPath Technology Company

USA . 1,841 parts In-Stock

1+ parts

$2.862

100+ parts

$2.633

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1,841

$2.862

$2.633

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ChromeModa Solutions

Germany . 4,849 parts In-Stock

1+ parts

$2.920

100+ parts

$2.394

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4,849

$2.920

$2.394

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IDEA Electronic Components Group

UK . 990 parts In-Stock

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$2.920

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$2.628

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990

$2.920

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$2.628

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AZTECH Wire

Italy . 232 parts In-Stock

1+ parts

$14.519

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232

$14.519

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One Stop Electronics

USA . 385 parts In-Stock

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$18.000

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385

$18.000

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Corphita

USA . 2,806 parts In-Stock

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Overview

Unlock the power of efficient data storage with the Texas Instruments SN74ABT7819-30PNR FIFO. Designed with high-quality materials and advanced technology, this FIFO offers unparalleled reliability and performance. Ideal for a wide range of applications, this product provides seamless data transfer in a synchronous operating mode. Experience fast cycle times and 3-state output characteristics for maximum efficiency. Trust Texas Instruments to deliver top-of-the-line products that meet your needs and exceed your expectations. Elevate your projects with the SN74ABT7819-30PNR FIFO today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, which is ideal for portable or rugged applications.

Cycle Time: 30.03 ns

A fast cycle time ensures quick and efficient data transfer, making this FIFO a suitable choice for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration easier.

No. of Terminals: 80

Having 80 terminals allows for versatile connectivity options, accommodating various input and output configurations.

Technology: BICMOS

Utilizing BICMOS technology combines the benefits of both bipolar and CMOS technologies, providing a balance between speed and power consumption.

Technical Specifications

FIFO SN74ABT7819-30PNR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

14 ns

Cycle Time:

30.03 ns

JESD-30 Code:

S-PQFP-G80

Length:

12 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

12 mm

Trade Compliance

SN74ABT7819-30PNR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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