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CD40105BF3A

Texas Instruments

CD40105BF3A by Texas Instruments

CD40105BF3A by Texas Instruments is a 16X4 FIFO with 666.66 ns cycle time, operating at 5V. It has 3-STATE output characteristics and supports a max clock frequency of 1.5 MHz. Ideal for military applications requiring fast data storage and retrieval in harsh environments.

Median Price

$12.346

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

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Freelance Electronics

USA . 11 parts In-Stock

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$12.346

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$12.963

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$12.222

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Vyrian

USA . 3,077 parts In-Stock

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Digiode

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Electronic Expediters

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Resion

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ComSIT Distribution GmbH

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Microfarads

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Mil-Aero Solutions, Inc.

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Native Components

USA . 177 parts In-Stock

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$0.057

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$0.055

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One Stop Electronics

USA . 761 parts In-Stock

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$2.000

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Parana Technologies

USA . 2,072 parts In-Stock

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$3.341

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$3.866

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DigiPath Technology Company

USA . 803 parts In-Stock

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$3.679

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$3.385

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ChromeModa Solutions

Germany . 3,446 parts In-Stock

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IDEA Electronic Components Group

UK . 1,808 parts In-Stock

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AZTECH Wire

Italy . 405 parts In-Stock

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Microchip USA

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Supply Digital

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Corphita

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Metaverse IC Inc.

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the CD40105BF3A FIFO memory chip. This innovative technology offers seamless data storage and retrieval in a compact, durable package. Ideal for a wide range of applications, from industrial automation to telecommunications, this product guarantees optimized performance and efficiency. Trust in Texas Instruments to deliver cutting-edge solutions that exceed your expectations and propel your projects to new heights.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic and glass-sealed body material provides durability and protection for the internal components of the FIFO, making it suitable for harsh environmental conditions.

Cycle Time: 666.66 ns

The fast cycle time of 666.66 ns ensures efficient data transfer within the FIFO, making it ideal for high-speed applications.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for independent operation of input and output signals, providing flexibility in data transmission and processing.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, the FIFO can withstand heat stress and operate reliably in various industrial settings.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the FIFO energy-efficient and reliable for long-term use.

Technical Specifications

FIFO CD40105BF3A attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

420 ns

Maximum Clock Frequency (fCLK):

1.5 MHz

Cycle Time:

666.66 ns

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5/15

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

5.08 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD40105BF3A Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-280-5116, 5962012805116

NIIN

012805116

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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