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SN74ACT2235-30PMR

Texas Instruments

SN74ACT2235-30PMR by Texas Instruments

SN74ACT2235-30PMR by Texas Instruments is a FIFO with 1KX9 organization, 30 ns cycle time, and 3-STATE output characteristics. It operates at 5V, suitable for commercial applications requiring fast data transfer in parallel mode. The device comes in a square plastic/epoxy package with gull wing terminals and is surface mountable.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,726 parts In-Stock

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4,726

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Digiode

USA . 3,637 parts In-Stock

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3,637

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Distributors (Availability)

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Parana Technologies

USA . 1,360 parts In-Stock

1+ parts

$4.594

100+ parts

-

1k+ parts

$5.056

10k+ parts

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1,360

$4.594

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$5.056

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DigiPath Technology Company

USA . 1,173 parts In-Stock

1+ parts

$5.059

100+ parts

$4.654

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-

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1,173

$5.059

$4.654

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ChromeModa Solutions

Germany . 3,679 parts In-Stock

1+ parts

$5.162

100+ parts

$4.233

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3,679

$5.162

$4.233

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IDEA Electronic Components Group

UK . 1,814 parts In-Stock

1+ parts

$5.162

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$4.646

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1,814

$5.162

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$4.646

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AZTECH Wire

Italy . 747 parts In-Stock

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$8.450

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747

$8.450

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One Stop Electronics

USA . 412 parts In-Stock

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$12.000

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412

$12.000

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Corphita

USA . 4,674 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality SN74ACT2235-30PMR FIFO by Texas Instruments. Designed with precision and reliability in mind, this FIFO device offers seamless data transfer capabilities in various applications. With a fast cycle time of 30 ns and an operating mode of asynchronous, this product ensures efficient performance. Its compact square package shape and surface mount design make it easy to integrate into your systems. Elevate your projects with the value and benefits of Texas Instruments' expertise in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making it suitable for various applications.

Cycle Time: 30 ns

Allows for fast data access and retrieval, enhancing operational efficiency.

Operating Mode: ASYNCHRONOUS

Enables independent operation without the need for synchronized timing, offering flexibility and simplicity in usage.

Nominal Supply Voltage / Vsup (V): 5

Provides a standard power supply requirement for compatibility with different systems.

No. of Terminals: 64

Offers sufficient connectivity options for integration with other components or systems.

Memory Density: 9216 bit

Provides ample memory capacity for storing and retrieving data efficiently.

Output Enable: YES

Allows for control over the output state, enhancing versatility and functionality.

Maximum Access Time: 25 ns

Ensures quick access to stored data, improving overall performance.

Technical Specifications

FIFO SN74ACT2235-30PMR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

BYPASS-XCVR

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G64

Length:

10 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

64

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

10 mm

Trade Compliance

SN74ACT2235-30PMR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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