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SN74ACT72235-30FN

Texas Instruments

SN74ACT72235-30FN by Texas Instruments

SN74ACT72235-30FN by Texas Instruments is a FIFO chip with 1KX9 organization, 30.3 ns cycle time, and 5V nominal voltage. It is used in applications requiring synchronous operation, such as data buffering and communication systems. The chip comes in a square plastic/epoxy package with 44 terminals for surface mount installation.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,282 parts In-Stock

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Digiode

USA . 324 parts In-Stock

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Parana Technologies

USA . 29 parts In-Stock

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$4.921

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$5.452

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29

$4.921

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DigiPath Technology Company

USA . 437 parts In-Stock

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$5.418

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$4.985

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ChromeModa Solutions

Germany . 6,613 parts In-Stock

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$5.529

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$4.534

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IDEA Electronic Components Group

UK . 426 parts In-Stock

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$5.529

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$4.976

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AZTECH Wire

Italy . 520 parts In-Stock

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$14.474

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One Stop Electronics

USA . 529 parts In-Stock

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$15.000

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Corphita

USA . 3,784 parts In-Stock

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Overview

Unlock seamless data transfer and storage with the SN74ACT72235-30FN FIFO chip from Texas Instruments. This high-quality product offers reliability, efficiency, and versatility for a wide range of applications. Whether you're in need of rapid data processing or smooth communication between devices, this FIFO chip delivers outstanding performance. Trust in Texas Instruments for innovative solutions that elevate your projects to new heights. Experience the value and benefits of the SN74ACT72235-30FN today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures the product is reliable and easy to handle.

Cycle Time: 30.3 ns

Fast cycle time ensures efficient operation and quick access to data.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage for easy integration into various systems.

No. of Terminals: 44

Sufficient number of terminals for connectivity and flexibility in usage.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and coordination for data processing.

Maximum Operating Temperature: 70 °C

Wide operating temperature range allows for usage in different environments.

Organization: 1KX9

Optimal organization for efficient memory storage and retrieval.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

No. of Words: 1024 words

Sufficient storage capacity for data processing and memory needs.

Output Enable: YES

Output enable feature provides control over data output, enhancing versatility.

Maximum Access Time: 25 ns

Fast access time ensures quick retrieval of data for efficient operations.

Technical Specifications

FIFO SN74ACT72235-30FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

FALL THRU 22NS

Cycle Time:

30.3 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.5862 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

16.5862 mm

Trade Compliance

SN74ACT72235-30FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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