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SN74ACT7200L-25RJR

Texas Instruments

SN74ACT7200L-25RJR by Texas Instruments

SN74ACT7200L-25RJR by Texas Instruments is a FIFO chip with 256x9 organization, 35ns cycle time, and 3-STATE output characteristics. It operates asynchronously at a nominal voltage of 5V. This chip is commonly used in applications requiring fast data storage and retrieval in parallel processing systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,551 parts In-Stock

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Digiode

USA . 215 parts In-Stock

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Parana Technologies

USA . 1,564 parts In-Stock

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$4.592

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$5.054

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IDEA Electronic Components Group

UK . 1,854 parts In-Stock

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$5.160

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$4.644

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ChromeModa Solutions

Germany . 1,390 parts In-Stock

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$5.160

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$4.231

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One Stop Electronics

USA . 1,000 parts In-Stock

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$14.000

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AZTECH Wire

Italy . 886 parts In-Stock

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$16.958

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Corphita

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DigiPath Technology Company

USA . 931 parts In-Stock

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Overview

Unlock seamless data transfer in your electronics projects with the SN74ACT7200L-25RJR FIFO chip from Texas Instruments. Designed for high-speed performance and reliability, this chip boasts a wide range of applications in communication systems, industrial automation, and more. With Texas Instruments' reputation for quality and innovation backing it up, you can trust that this FIFO chip delivers exceptional value and benefits to your designs. Upgrade your projects today with the SN74ACT7200L-25RJR and experience the advantages of top-tier technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to external environmental factors, making it a reliable choice for long-term use.

Cycle Time: 35 ns

Fast cycle time ensures quick data transfer and processing, improving the overall efficiency of the FIFO product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for data transfer without the need for synchronized clock signals, providing flexibility in usage.

Nominal Supply Voltage: 5 V

Operates at a standard voltage level, ensuring compatibility with most systems and ease of integration.

Memory Width: 9

With a memory width of 9, this FIFO product can store and process data efficiently in parallel, enabling faster data handling.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the FIFO product energy-efficient and reliable.

No. of Words: 256 words

Large memory capacity allows for storing a significant amount of data, making the FIFO product suitable for applications requiring extensive data storage.

Maximum Access Time: 25 ns

Quick access time ensures fast retrieval of data when needed, enhancing the overall performance of the FIFO product.

Technical Specifications

FIFO SN74ACT7200L-25RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

RETRANSMIT

Cycle Time:

35 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

2304 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7200L-25RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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