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SN74ACT7200L35DV

Texas Instruments

SN74ACT7200L35DV by Texas Instruments

SN74ACT7200L35DV by Texas Instruments is a FIFO memory IC with 256x9 organization, operating at 22.2 MHz clock frequency and 45 ns cycle time. It is designed for commercial applications requiring fast asynchronous data storage and retrieval in a small outline package.

Median Price

$2.950

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

$2.640

1k+ parts

$2.360

10k+ parts

$2.220

1,300

-

$2.640

$2.360

$2.220

DigiKey

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

$3.480

1k+ parts

-

10k+ parts

-

1,300

-

$3.480

-

-

Verical

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.950

10k+ parts

$2.775

1,300

-

-

$2.950

$2.775

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,996 parts In-Stock

1+ parts

$2.784

100+ parts

-

1k+ parts

-

10k+ parts

-

2,996

$2.784

-

-

-

Vyrian

USA . 960 parts In-Stock

1+ parts

$2.930

100+ parts

-

1k+ parts

-

10k+ parts

-

960

$2.930

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,460 parts In-Stock

1+ parts

$2.275

100+ parts

-

1k+ parts

$2.775

10k+ parts

-

1,460

$2.275

-

$2.775

-

ChromeModa Solutions

Germany . 6,811 parts In-Stock

1+ parts

$2.556

100+ parts

$2.096

1k+ parts

-

10k+ parts

-

6,811

$2.556

$2.096

-

-

IDEA Electronic Components Group

UK . 307 parts In-Stock

1+ parts

$2.556

100+ parts

-

1k+ parts

$2.300

10k+ parts

-

307

$2.556

-

$2.300

-

Corphita

USA . 4,936 parts In-Stock

1+ parts

$2.637

100+ parts

-

1k+ parts

-

10k+ parts

-

4,936

$2.637

-

-

-

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$6.483

100+ parts

$5.900

1k+ parts

$5.316

10k+ parts

-

450

$6.483

$5.900

$5.316

-

DigiPath Technology Company

USA . 2,273 parts In-Stock

1+ parts

-

100+ parts

$2.304

1k+ parts

-

10k+ parts

-

2,273

-

$2.304

-

-

Overview

Experience seamless data transfer with the SN74ACT7200L35DV FIFO by Texas Instruments, a leader in semiconductor manufacturing. This high-quality FIFO device offers fast cycle times of 45 ns and operates at a nominal supply voltage of 5V, making it perfect for a wide range of applications. With a compact package style and dual terminal position, this product is versatile and reliable. Trust Texas Instruments to provide cutting-edge technology that delivers exceptional performance and value to customers seeking efficient data storage solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO.

Cycle Time: 45 ns

Fast cycle time allows for efficient data retrieval and storage.

Operating Mode: ASYNCHRONOUS

Allows for independent operation and data transfer without the need for a synchronous clock signal.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with most electronic systems.

Maximum Clock Frequency (fCLK): 22.2 MHz

High clock frequency allows for fast data transfer rates.

Technical Specifications

FIFO SN74ACT7200L35DV attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

Maximum Clock Frequency (fCLK):

22.2 MHz

Cycle Time:

45 ns

JESD-30 Code:

R-PDSO-G28

Memory Density:

2304 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

28

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X9

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.45

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.008 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN74ACT7200L35DV Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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