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SN74ABT3612-30PQR

Texas Instruments

SN74ABT3612-30PQR by Texas Instruments

SN74ABT3612-30PQR by Texas Instruments is a FIFO with 64x36 organization, 30 ns cycle time, and 5V nominal voltage. It is used in applications requiring synchronous operation, such as data buffering and temporary storage in electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,697 parts In-Stock

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3,697

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Digiode

USA . 1,636 parts In-Stock

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1,636

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 365 parts In-Stock

1+ parts

$4.306

100+ parts

-

1k+ parts

$4.730

10k+ parts

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365

$4.306

-

$4.730

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DigiPath Technology Company

USA . 331 parts In-Stock

1+ parts

$4.741

100+ parts

$4.362

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331

$4.741

$4.362

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IDEA Electronic Components Group

UK . 1,819 parts In-Stock

1+ parts

$4.838

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-

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$4.354

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1,819

$4.838

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$4.354

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ChromeModa Solutions

Germany . 810 parts In-Stock

1+ parts

$4.838

100+ parts

$3.967

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-

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810

$4.838

$3.967

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AZTECH Wire

Italy . 593 parts In-Stock

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$5.437

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593

$5.437

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One Stop Electronics

USA . 1,343 parts In-Stock

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$13.000

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1,343

$13.000

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Corphita

USA . 4,831 parts In-Stock

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Overview

Elevate your electronics with the SN74ABT3612-30PQR by Texas Instruments, a top-of-the-line FIFO memory solution that guarantees optimized performance and reliability. Designed with precision engineering and cutting-edge technology, this product offers seamless integration and unparalleled efficiency for a wide range of applications. Experience faster data processing, smoother operations, and enhanced productivity with this high-quality component that is sure to exceed your expectations. Trust in Texas Instruments to deliver excellence in every detail, and take your projects to the next level with the SN74ABT3612-30PQR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good durability and protection for the components inside the FIFO, ensuring a longer lifespan for the product.

Cycle Time: 30 ns

A fast cycle time of 30 ns allows for quick data retrieval and storage in the FIFO, making it efficient for data processing tasks.

Operating Mode: SYNCHRONOUS

In synchronous operation mode, data transfers are synchronized with a clock signal, providing precise timing and coordination within the FIFO system.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources and stable performance for the FIFO.

Output Characteristics: 3-STATE

3-STATE output allows for tristate control, enabling multiple devices to share the output bus without causing interference, enhancing the versatility of the FIFO.

Memory Density: 2304 bit

With a high memory density of 2304 bits, this FIFO can store a large amount of data efficiently, making it suitable for applications requiring extensive data buffering.

Maximum Access Time: 15 ns

A fast maximum access time of 15 ns ensures quick data retrieval from the FIFO, reducing latency and improving overall system performance.

Technical Specifications

FIFO SN74ABT3612-30PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

PARITY GENERATOR/CHECKER; MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

2304 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

64 words

No. of Words Code:

64

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ABT3612-30PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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