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SN74ACT7202LA-50RJR

Texas Instruments

SN74ACT7202LA-50RJR by Texas Instruments

SN74ACT7202LA-50RJR by Texas Instruments is a FIFO chip with 1KX9 organization, 65 ns cycle time, and 3-STATE output characteristics. It operates asynchronously at a supply voltage of 5V and is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,210 parts In-Stock

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Digiode

USA . 470 parts In-Stock

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470

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Parana Technologies

USA . 1,222 parts In-Stock

1+ parts

$4.419

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-

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$4.844

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$4.419

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$4.844

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DigiPath Technology Company

USA . 1,887 parts In-Stock

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$4.866

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$4.866

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ChromeModa Solutions

Germany . 4,136 parts In-Stock

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$4.965

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$4.071

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4,136

$4.965

$4.071

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IDEA Electronic Components Group

UK . 947 parts In-Stock

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$4.965

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$4.468

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947

$4.965

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$4.468

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AZTECH Wire

Italy . 401 parts In-Stock

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$8.931

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401

$8.931

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One Stop Electronics

USA . 702 parts In-Stock

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$30.000

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$30.000

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Kepictronics

USA . 6,750 parts In-Stock

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Corphita

USA . 93 parts In-Stock

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Overview

Enhance your electronic designs with the SN74ACT7202LA-50RJR by Texas Instruments, a high-quality FIFO chip that offers reliable performance and seamless integration. Manufactured by industry leader Texas Instruments, this chip is ideal for a wide range of applications in the technology sector. With a cycle time of only 65ns and a nominal supply voltage of 5V, this chip delivers fast and efficient data processing. Trust in Texas Instruments' expertise and choose the SN74ACT7202LA-50RJR for all your FIFO needs, ensuring top-notch quality and superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FIFO, ensuring long-term reliability.

Cycle Time: 65 ns

The fast cycle time of 65 ns allows for quick data transfer and processing, making this FIFO suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V makes this FIFO compatible with a wide range of systems and power sources.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options for interfacing with other components in a system.

Output Characteristics: 3-STATE

The 3-STATE output allows the FIFO to drive output signals to a high impedance state when not actively transmitting data, reducing power consumption and signal interference.

Technology: CMOS

Being based on CMOS technology, this FIFO offers low power consumption and high noise immunity, making it suitable for various applications.

No. of Words: 1024 words

With a capacity of 1024 words, this FIFO can store a significant amount of data for efficient data processing and retrieval.

Memory Width: 9

Having a memory width of 9 bits allows for storing and processing data in parallel, enhancing the speed and efficiency of data transfer.

Technical Specifications

FIFO SN74ACT7202LA-50RJR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

Additional Features:

RETRANSMIT

Cycle Time:

65 ns

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

9216 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX9

Output Characteristics:

3-STATE

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7202LA-50RJR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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