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SN74ACT3632-15PCBR

Texas Instruments

SN74ACT3632-15PCBR by Texas Instruments

SN74ACT3632-15PCBR by Texas Instruments is a FIFO with 512x36 organization, 15 ns cycle time, and operates at 5V. It is used in applications requiring fast data transfer and storage, such as networking equipment and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,395 parts In-Stock

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4,395

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Digiode

USA . 996 parts In-Stock

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996

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Distributors (Availability)

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Parana Technologies

USA . 1,490 parts In-Stock

1+ parts

$1.834

100+ parts

-

1k+ parts

$2.384

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1,490

$1.834

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$2.384

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One Stop Electronics

USA . 1,159 parts In-Stock

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$2.000

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$2.000

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DigiPath Technology Company

USA . 1,992 parts In-Stock

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$2.020

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$1.858

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$2.020

$1.858

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ChromeModa Solutions

Germany . 5,624 parts In-Stock

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$2.061

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$1.690

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5,624

$2.061

$1.690

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IDEA Electronic Components Group

UK . 1,578 parts In-Stock

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$2.061

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$1.855

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1,578

$2.061

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$1.855

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AZTECH Wire

Italy . 895 parts In-Stock

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$11.470

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895

$11.470

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Corphita

USA . 4,464 parts In-Stock

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Overview

Enhance your electronic designs with the SN74ACT3632-15PCBR by Texas Instruments, a high-quality FIFO memory solution that offers unparalleled performance and reliability. With a fast cycle time of 15 ns and synchronous operation mode, this device is perfect for applications requiring quick data transfer. The compact square package shape and low profile design make it ideal for space-constrained projects. Trust in Texas Instruments' expertise in semiconductor manufacturing to deliver a product that exceeds your expectations. Upgrade your systems today with the SN74ACT3632-15PCBR and experience seamless data storage and retrieval like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FIFO.

Cycle Time: 15 ns

Fast cycle time ensures quick and efficient data transfer within the FIFO.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and coordination in data processing.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage supply requirement makes integration and operation simple.

Organization: 512X36

High organization value provides ample storage capacity for data handling.

Width: 14 mm

Compact width allows for space-efficient placement in electronic circuits.

No. of Words: 512 words

Large number of words enhances the FIFO's data storage capabilities.

Memory Width: 36

Wide memory width accommodates larger data transfers for improved performance.

Output Enable: YES

Output enable feature gives control over data output, adding flexibility to the functionality.

Maximum Access Time: 11 ns

Low access time ensures rapid retrieval of data from the FIFO.

Technical Specifications

FIFO SN74ACT3632-15PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

11 ns

Additional Features:

MAILBOX

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

18432 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ACT3632-15PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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