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SN74ACT3641-15PQR

Texas Instruments

SN74ACT3641-15PQR by Texas Instruments

SN74ACT3641-15PQR by Texas Instruments is a FIFO with 15ns cycle time, 1Kx36 organization, and 3-STATE output characteristics. It is used in applications requiring synchronous operation, such as data buffering and temporary storage in CMOS technology. The device operates at a nominal voltage of 5V and has a memory density of 36864 bits.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,472 parts In-Stock

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Digiode

USA . 617 parts In-Stock

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617

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Parana Technologies

USA . 372 parts In-Stock

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$5.112

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$5.699

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372

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$5.699

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DigiPath Technology Company

USA . 803 parts In-Stock

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$5.629

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ChromeModa Solutions

Germany . 6,657 parts In-Stock

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$5.744

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$4.710

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IDEA Electronic Components Group

UK . 1,964 parts In-Stock

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$5.744

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$5.170

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One Stop Electronics

USA . 232 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 695 parts In-Stock

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$14.234

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Corphita

USA . 2,935 parts In-Stock

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Overview

Unlock seamless data transfer and storage with the SN74ACT3641-15PQR FIFO by Texas Instruments. Designed with cutting-edge technology and reliable materials, this synchronous FIFO offers a cycle time of 15 ns, ensuring quick and efficient operations. Perfect for a wide range of applications, this versatile device boasts a memory width of 36 and a memory density of 36864 bit, making it an essential component for any project requiring high-speed data processing. Experience the superior quality and performance that Texas Instruments is renowned for with the SN74ACT3641-15PQR FIFO.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and durable, ideal for portable devices.

Surface Mount: YES

Surface mount feature makes it easy to integrate into PCBs, saving space and reducing assembly time.

Cycle Time: 15 ns

Fast cycle time of 15 ns ensures quick access to data, improving overall system performance.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for precise timing and synchronization with other components in the system.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V supply, making it easy to integrate into existing systems.

No. of Terminals: 132

Ample number of terminals for connecting to other components and peripherals in the system.

Package Style (Meter): FLATPACK, BUMPER

Flatpack and bumper package style provides protection and ease of handling during assembly.

Maximum Operating Temperature: 70 °C

Wide operating temperature range of up to 70°C ensures reliability in various environmental conditions.

Organization: 1KX36

1KX36 organization allows for efficient data storage and retrieval.

Output Characteristics: 3-STATE

3-STATE output characteristics provide flexibility in controlling the output signals.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature of 0°C ensures reliable performance even in cold environments.

Terminal Position: QUAD

Quad terminal position allows for easy connection and integration into the system.

Width: 24.13 mm

Compact width of 24.13 mm saves space on the PCB and allows for efficient placement of components.

Minimum Supply Voltage (Vsup): 4.5 V

Low minimum supply voltage of 4.5V ensures compatibility with a wide range of power sources.

Length: 24.13 mm

Compact length of 24.13 mm makes it suitable for applications where space is limited.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliable performance in standard operating conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy efficient and reliable.

Parallel or Serial: PARALLEL

Parallel operation allows for fast data transfer and processing, ideal for high-speed applications.

Terminal Form: GULL WING

Gull wing terminal form provides easy soldering and reliable connection with the PCB.

No. of Words: 1024 words

Large number of words ensures ample data storage capacity for various applications.

Memory Width: 36

Memory width of 36 bits allows for efficient data storage and retrieval.

Terminal Pitch: 0.635 mm

Small terminal pitch of 0.635 mm allows for compact design and efficient use of PCB space.

No. of Words Code: 1K

1K words code provides information about the capacity and capability of the memory.

Maximum Supply Voltage (Vsup): 5.5 V

Maximum supply voltage of 5.5V ensures safe operation within specified voltage limits.

Memory Density: 36864 bit

High memory density of 36864 bits allows for efficient data storage and retrieval in a compact package.

Output Enable: YES

Output enable feature provides control over the output signals, enhancing flexibility in system design.

Maximum Access Time: 11 ns

Fast maximum access time of 11 ns ensures quick data retrieval and processing, improving system performance.

Technical Specifications

FIFO SN74ACT3641-15PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

11 ns

Additional Features:

RETRANSMIT; MAILBOX

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3641-15PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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