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CD74HCT40105MTG4

Texas Instruments

CD74HCT40105MTG4 by Texas Instruments

CD74HCT40105MTG4 by Texas Instruments is a FIFO memory IC with 16x4 organization, 64-bit memory density, and 12 MHz clock frequency. It operates synchronously at a cycle time of 100 ns and is suitable for military-grade applications requiring fast data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,203 parts In-Stock

1+ parts

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8,203

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Digiode

USA . 3,184 parts In-Stock

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3,184

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 958 parts In-Stock

1+ parts

$0.169

100+ parts

-

1k+ parts

-

10k+ parts

$0.163

958

$0.169

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-

$0.163

Northwest PG Solutions

USA . 1,267 parts In-Stock

1+ parts

$0.186

100+ parts

-

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$0.164

1,267

$0.186

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$0.164

Parana Technologies

USA . 1,819 parts In-Stock

1+ parts

$1.838

100+ parts

-

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$2.386

10k+ parts

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1,819

$1.838

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$2.386

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DigiPath Technology Company

USA . 1,370 parts In-Stock

1+ parts

$2.024

100+ parts

$1.862

1k+ parts

-

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1,370

$2.024

$1.862

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ChromeModa Solutions

Germany . 6,006 parts In-Stock

1+ parts

$2.065

100+ parts

$1.693

1k+ parts

-

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6,006

$2.065

$1.693

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IDEA Electronic Components Group

UK . 184 parts In-Stock

1+ parts

$2.065

100+ parts

-

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$1.858

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184

$2.065

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$1.858

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One Stop Electronics

USA . 795 parts In-Stock

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$7.000

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795

$7.000

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AZTECH Wire

Italy . 335 parts In-Stock

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$16.971

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335

$16.971

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Corphita

USA . 2,042 parts In-Stock

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Overview

Discover the cutting-edge technology of Texas Instruments with the CD74HCT40105MTG4, a high-quality FIFO memory IC designed for reliable and efficient data storage. With a compact design and synchronous operation, this versatile component is ideal for a wide range of applications. From industrial automation to telecommunications, this product offers unparalleled performance and value, making it a top choice for engineers and developers looking to optimize their systems. Trust Texas Instruments for superior quality and innovation in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for various applications.

Cycle Time: 100 ns

The fast cycle time ensures efficient operation and quick data processing.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable data transfer and coordination with other components.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with common power sources.

Maximum Operating Temperature: 125 °C

High operating temperature range allows the product to be used in diverse environments.

Memory Density: 64 bit

High memory density enables storage of large amounts of data in a compact space.

Output Enable: YES

Output enable feature provides control over data output, enhancing flexibility in data retrieval.

Technical Specifications

FIFO CD74HCT40105MTG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

2250 ns

Maximum Clock Frequency (fCLK):

12 MHz

Cycle Time:

100 ns

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

9.9 mm

Memory Density:

64 bit

Memory IC Type:

Memory Width:

4

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

16

No. of Words:

16 words

No. of Words Code:

16

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16X4

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.16 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

CD74HCT40105MTG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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