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IDT7200L12SOG8

Renesas Electronics

IDT7200L12SOG8 by Renesas Electronics

The Renesas Electronics IDT7200L12SOG8 is a FIFO memory with 256x9 organization, operating at 50 MHz clock frequency. It features a cycle time of 20 ns and operates on a nominal voltage of 5V. Ideal for applications requiring fast data storage and retrieval in commercial-grade environments.

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363

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Nova Conductors

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AZTECH Wire

Italy . 263 parts In-Stock

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263

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Ampacity Inc.

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649

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Argo Parts USA

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Continental Prestige Electronics

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Aranea Global

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500

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Overview

Experience seamless data transfer with the Renesas Electronics IDT7200L12SOG8 FIFO, a high-quality memory IC designed for fast and reliable performance. Renowned for their innovative technology, Renesas Electronics delivers top-notch products that exceed industry standards. Perfect for applications requiring rapid information flow, this FIFO ensures efficient data handling with its asynchronous operating mode and 256x9 organization. Trust in Renesas Electronics to provide you with cutting-edge solutions that offer optimal value and performance. Elevate your projects with the IDT7200L12SOG8 FIFO today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability of the product.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for independent operation of the FIFO, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Standard nominal supply voltage of 5V ensures compatibility with common power sources.

Maximum Clock Frequency (fCLK): 50 MHz

High clock frequency allows for fast data transfer and processing.

Memory Density: 2304 bit

The high memory density provides ample storage capacity for data handling.

Technical Specifications

FIFO IDT7200L12SOG8 attributes and parameters. Explore more FIFO devices from Renesas Electronics

Specs

Maximum Access Time:

12 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

R-PDSO-G28

JESD-609 Code:

e3

Length:

18.3642 mm

Memory Density:

2304 bit

Memory IC Type:

Memory Width:

9

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

28

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X9

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP28,.5

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.048 mm

Maximum Standby Current:

.005 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

80 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

8.763 mm

Trade Compliance

IDT7200L12SOG8 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Renesas Electronics

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