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CY7C4285V-15ASXC

Infineon Technologies

CY7C4285V-15ASXC by Infineon Technologies

Infineon's CY7C4285V-15ASXC FIFO features 64Kx18 organization, 15ns cycle time, and 66.7MHz clock frequency. Ideal for applications requiring fast synchronous operation in commercial temperature range with low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Flip Electronics

USA . 456 parts In-Stock

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Digiode

USA . 284 parts In-Stock

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284

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Nova Conductors

Japan . 150 parts In-Stock

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Chip Stock

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Vyrian

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Distributors (Availability)

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Ampacity Inc.

Singapore . 184 parts In-Stock

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$21.000

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$21.000

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Modulus Dynamics

Lithuania . 3,810 parts In-Stock

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$24.770

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$23.779

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$22.788

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3,810

$24.770

$23.779

$22.788

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Authorized Procurement Solutions

USA . 5,900 parts In-Stock

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Continental Prestige Electronics

USA . 3,487 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,064 parts In-Stock

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Argo Parts USA

USA . 1,872 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,376 parts In-Stock

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Microchip USA

USA . 323 parts In-Stock

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Perfect Parts

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Corphita

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Aranea Global

USA . 100 parts In-Stock

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Overview

Enhance your electronic projects with the CY7C4285V-15ASXC by Infineon Technologies, a high-quality FIFO memory device designed to optimize data storage and retrieval. With a focus on innovation and reliability, Infineon Technologies ensures that this product exceeds industry standards, providing seamless operation in various applications. Experience faster cycle times and increased efficiency with its synchronous operating mode, making it ideal for demanding tasks. Trust in the value and benefits of the CY7C4285V-15ASXC to streamline your projects and elevate your performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for use in various applications.

Cycle Time: 15 ns

The fast cycle time of 15 ns ensures quick data retrieval and processing, enhancing the overall performance of the FIFO.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a nominal supply voltage of 3.3V ensures efficient power consumption and compatibility with standard power sources.

Operating Mode: SYNCHRONOUS

The synchronous operation mode ensures synchronized data transfer and processing, improving system reliability and performance.

Maximum Clock Frequency (fCLK): 66.7 MHz

With a high maximum clock frequency of 66.7 MHz, the FIFO can handle data at a rapid pace, making it suitable for high-speed applications.

Memory Density: 1179648 bit

The high memory density of 1179648 bits allows the FIFO to store a large amount of data, making it suitable for applications requiring extensive data storage.

Technical Specifications

FIFO CY7C4285V-15ASXC attributes and parameters. Explore more FIFO devices from Infineon Technologies

Specs

Maximum Access Time:

10 ns

Additional Features:

RETRANSMIT

Maximum Clock Frequency (fCLK):

66.7 MHz

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e3

Length:

10 mm

Memory Density:

1179648 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

64

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.004 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

10 mm

Trade Compliance

CY7C4285V-15ASXC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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