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1M7806-40DLG4

Texas Instruments

1M7806-40DLG4 by Texas Instruments

1M7806-40DLG4 by Texas Instruments is a FIFO memory with 256x18 organization, 40ns cycle time, and 50MHz clock frequency. Ideal for applications requiring fast synchronous data storage and retrieval in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,154 parts In-Stock

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Digiode

USA . 3,357 parts In-Stock

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3,357

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Distributors (Availability)

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Northwest PG Solutions

USA . 2,309 parts In-Stock

1+ parts

$2.893

100+ parts

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2,309

$2.893

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$4.091

100+ parts

$3.723

1k+ parts

$3.355

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50

$4.091

$3.723

$3.355

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Parana Technologies

USA . 736 parts In-Stock

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$4.254

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-

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$4.687

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736

$4.254

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$4.687

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Corohmni

South Africa . 45 parts In-Stock

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$4.528

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45

$4.528

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DigiPath Technology Company

USA . 1,120 parts In-Stock

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$4.684

100+ parts

$4.310

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1,120

$4.684

$4.310

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ChromeModa Solutions

Germany . 4,950 parts In-Stock

1+ parts

$4.780

100+ parts

$3.920

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4,950

$4.780

$3.920

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IDEA Electronic Components Group

UK . 606 parts In-Stock

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$4.780

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$4.302

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606

$4.780

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One Stop Electronics

USA . 224 parts In-Stock

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$9.000

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$9.000

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AZTECH Wire

Italy . 878 parts In-Stock

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$16.114

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Corphita

USA . 4,461 parts In-Stock

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Native Components

USA . 632 parts In-Stock

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$2.551

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632

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Overview

Experience seamless data processing with the 1M7806-40DLG4 FIFO by Texas Instruments. Crafted with precision and expertise, this compact device offers lightning-fast cycle times of just 40 ns, making it ideal for a wide range of applications. With a nominal supply voltage of 5V and an operating mode of synchronous, this FIFO ensures reliable performance at all times. Whether you're in need of efficient data storage or rapid data transfer, this versatile product delivers unmatched value and benefits to customers seeking top-notch quality and reliability. Trust Texas Instruments for all your FIFO needs and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for the product.

Cycle Time: 40 ns

The fast cycle time of 40 ns allows for efficient data transfer and processing.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V provides stable power to the product.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70 °C ensures reliability under various environmental conditions.

Organization: 256X18

The 256x18 organization allows for efficient storage and retrieval of data in the FIFO product.

Technology: CMOS

The CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable.

Memory IC Type: OTHER FIFO

The use of FIFO memory IC type ensures efficient data handling and processing in the product.

Output Enable: YES

The output enable feature allows for control over the data output, enhancing the flexibility of the product.

Technical Specifications

FIFO 1M7806-40DLG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

20 ns

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

40 ns

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e4

Length:

18.415 mm

Memory Density:

4608 bit

Memory IC Type:

Memory Width:

18

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

56

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256X18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP56,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.79 mm

Sub-Category:

FIFOs

Maximum Supply Current:

.4 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7.5 mm

Trade Compliance

1M7806-40DLG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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