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1M7802-60PNG4

Texas Instruments

1M7802-60PNG4 by Texas Instruments

1M7802-60PNG4 by Texas Instruments is a 1KX18 FIFO with 60ns cycle time, operating at 5V. It features a low profile flatpack package and GULL WING terminals. Ideal for applications requiring fast synchronous data transfer in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,067 parts In-Stock

1+ parts

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8,067

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Digiode

USA . 1,853 parts In-Stock

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1,853

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Distributors (Availability)

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Native Components

USA . 112 parts In-Stock

1+ parts

$0.784

100+ parts

-

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112

$0.784

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Northwest PG Solutions

USA . 164 parts In-Stock

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$0.862

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164

$0.862

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Parana Technologies

USA . 2,309 parts In-Stock

1+ parts

$2.774

100+ parts

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$3.258

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2,309

$2.774

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$3.258

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DigiPath Technology Company

USA . 1,673 parts In-Stock

1+ parts

$3.055

100+ parts

$2.810

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1,673

$3.055

$2.810

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ChromeModa Solutions

Germany . 5,738 parts In-Stock

1+ parts

$3.117

100+ parts

$2.556

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5,738

$3.117

$2.556

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IDEA Electronic Components Group

UK . 1,947 parts In-Stock

1+ parts

$3.117

100+ parts

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$2.805

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1,947

$3.117

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$2.805

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One Stop Electronics

USA . 692 parts In-Stock

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$12.000

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692

$12.000

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AZTECH Wire

Italy . 595 parts In-Stock

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$17.976

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595

$17.976

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Ampacity Inc.

Singapore . 1,388 parts In-Stock

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$29.000

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$29.000

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Corphita

USA . 3,009 parts In-Stock

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Overview

Elevate your electronics projects with the Texas Instruments 1M7802-60PNG4 FIFO, a high-quality memory solution designed for optimal performance. Built by a trusted manufacturer known for reliability and innovation, this FIFO device offers seamless operation in various applications. With a fast cycle time of 60ns and a nominal supply voltage of 5V, this product ensures efficient data storage and retrieval. Its compact design and advanced technology make it perfect for commercial-grade projects, providing customers with unmatched value and superior results. Experience the benefits of top-tier memory solutions with the 1M7802-60PNG4 by Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable electronic devices.

Cycle Time: 60 ns

The fast cycle time of 60 ns ensures quick data access and processing, making the product efficient for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage ensures reliable and stable operation of the product in various electronic systems.

Operating Mode: SYNCHRONOUS

The synchronous operating mode allows for synchronized data transfers, enabling better coordination in multi-device communication.

Memory Density: 18432 bit

The high memory density of 18432 bits provides ample storage capacity for data, making the product suitable for storing large amounts of information.

Technical Specifications

FIFO 1M7802-60PNG4 attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

45 ns

Cycle Time:

60 ns

JESD-30 Code:

S-PQFP-G80

JESD-609 Code:

e4

Length:

12 mm

Memory Density:

18432 bit

Memory Width:

18

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

80

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

12 mm

Trade Compliance

1M7802-60PNG4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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