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SN74ACT3638-30PCBR

Texas Instruments

SN74ACT3638-30PCBR by Texas Instruments

SN74ACT3638-30PCBR by Texas Instruments is a FIFO with 512x32 organization, 30 ns cycle time, and 3-STATE output characteristics. It operates synchronously at 5V and is ideal for applications requiring fast data storage and retrieval in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,193 parts In-Stock

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Digiode

USA . 2,016 parts In-Stock

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2,016

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,206 parts In-Stock

1+ parts

$4.559

100+ parts

-

1k+ parts

$5.008

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2,206

$4.559

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$5.008

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DigiPath Technology Company

USA . 1,666 parts In-Stock

1+ parts

$5.020

100+ parts

$4.618

1k+ parts

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1,666

$5.020

$4.618

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ChromeModa Solutions

Germany . 1,596 parts In-Stock

1+ parts

$5.122

100+ parts

$4.200

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1,596

$5.122

$4.200

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IDEA Electronic Components Group

UK . 754 parts In-Stock

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$5.122

100+ parts

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$4.610

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754

$5.122

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$4.610

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One Stop Electronics

USA . 1,510 parts In-Stock

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$8.000

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1,510

$8.000

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AZTECH Wire

Italy . 432 parts In-Stock

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$16.713

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432

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Corphita

USA . 4,846 parts In-Stock

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Overview

Unlock seamless data transfer and efficient processing with the Texas Instruments SN74ACT3638-30PCBR FIFO. Known for their superior quality and reliability, Texas Instruments delivers unparalleled performance in this category of products. Perfect for a wide range of applications, this FIFO offers customers exceptional value and benefits. Experience faster cycle times, precise synchronous operation, and optimal organization with 512 words x 32 memory width. Elevate your projects with the SN74ACT3638-30PCBR and enjoy the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, making it easy to handle and long-lasting.

Surface Mount: YES

Being surface mountable means easy and efficient installation on circuit boards, saving space and allowing for a more compact design.

Cycle Time: 30 ns

The fast cycle time of 30 ns ensures quick and efficient data transfer, making the product suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures coordinated and precise data flow, improving system performance and reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and power sources.

No. of Terminals: 120

Having 120 terminals allows for versatile connectivity options and interfaces with other components.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in demanding environments.

Organization: 512X32

The organization of 512 words by 32 memory width provides ample storage capacity and efficient data handling.

Output Characteristics: 3-STATE

The 3-state output characteristics allow for flexible signal control and management, enhancing system functionality.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0°C ensures the product can function reliably in a wide range of conditions.

Terminal Position: QUAD

The quad terminal position offers stable and secure connection points for interfacing with external devices.

Width: 14 mm

The compact width of 14mm makes the product suitable for space-constrained applications and allows for efficient PCB layout.

Minimum Supply Voltage (Vsup): 4.5 V

The minimum supply voltage of 4.5V ensures the product can operate reliably even at lower power levels.

Length: 14 mm

The short length of 14mm contributes to the overall compact design of the product, ideal for applications where space is a premium.

Temperature Grade: COMMERCIAL

Being commercial-grade ensures the product meets industry standards for reliability and performance in typical operating conditions.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with a wide range of systems, making it a popular choice for integrated circuits.

Parallel or Serial: PARALLEL

The parallel data transfer mode enables fast and simultaneous communication between the FIFO and other components, suitable for high-throughput applications.

Terminal Form: GULL WING

The gull-wing terminal form provides reliable and secure connections to the PCB, ensuring stability and durability in use.

No. of Words: 512 words

With 512 words of memory, the product offers ample storage capacity for data processing and retrieval.

Memory Width: 32

A memory width of 32 ensures efficient data handling and processing, suitable for a wide range of applications.

Terminal Pitch: 0.4 mm

The small terminal pitch of 0.4mm allows for high-density mounting on the PCB, saving space and enabling compact designs.

No. of Words Code: 512

The presence of 512 words in the code allows for a wide range of data storage and processing capabilities, making the product versatile and adaptable.

Maximum Supply Voltage (Vsup): 5.5 V

The maximum supply voltage of 5.5V provides a safety margin for voltage fluctuations and ensures the product can operate reliably under varying conditions.

Memory Density: 16384 bit

With a memory density of 16384 bits, the product offers high storage capacity for data-intensive applications, ensuring efficient data handling and processing.

Output Enable: YES

The presence of an output enable feature allows for flexible control over the output signal, enhancing system functionality and performance.

Maximum Access Time: 15 ns

The fast maximum access time of 15 ns ensures quick data retrieval and efficient operation, making the product suitable for high-speed applications.

Technical Specifications

FIFO SN74ACT3638-30PCBR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

15 ns

Additional Features:

RETRANSMIT; MAILBOX

Cycle Time:

30 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

16384 bit

Memory Width:

32

No. of Functions:

1

No. of Terminals:

120

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X32

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ACT3638-30PCBR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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