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SN74ACT3642-15PQR

Texas Instruments

SN74ACT3642-15PQR by Texas Instruments

SN74ACT3642-15PQR by Texas Instruments is a FIFO with 1KX36 organization, 15 ns cycle time, and 5V nominal voltage. It is used in applications requiring fast synchronous operation and 3-STATE output characteristics. Ideal for commercial temperature grade environments needing high-speed parallel memory access.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,239 parts In-Stock

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5,239

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Digiode

USA . 2,059 parts In-Stock

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2,059

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Distributors (Availability)

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Parana Technologies

USA . 2,298 parts In-Stock

1+ parts

$4.119

100+ parts

-

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$4.571

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2,298

$4.119

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$4.571

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DigiPath Technology Company

USA . 141 parts In-Stock

1+ parts

$4.535

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141

$4.535

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IDEA Electronic Components Group

UK . 1,514 parts In-Stock

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$4.628

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-

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$4.165

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1,514

$4.628

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$4.165

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ChromeModa Solutions

Germany . 493 parts In-Stock

1+ parts

$4.628

100+ parts

$3.795

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493

$4.628

$3.795

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One Stop Electronics

USA . 691 parts In-Stock

1+ parts

$10.000

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691

$10.000

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AZTECH Wire

Italy . 642 parts In-Stock

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$10.874

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642

$10.874

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Corphita

USA . 2,304 parts In-Stock

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Overview

Unlock unparalleled speed and reliability with the SN74ACT3642-15PQR FIFO from Texas Instruments. Designed for seamless data management, this FIFO boasts a 15ns cycle time and synchronous operation, ensuring optimal performance in various applications. With a memory width of 36 and 1K words organization, this device offers unmatched efficiency. Trust in Texas Instruments' reputation for quality and innovation, and experience the value and benefits this product brings to your projects. Choose the SN74ACT3642-15PQR for superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the components inside the package, ensuring long-term reliability.

Cycle Time: 15 ns

With a fast cycle time of 15 ns, this FIFO product offers high-speed operation, making it ideal for time-sensitive applications.

Operating Mode: SYNCHRONOUS

The synchronous operating mode ensures synchronized and efficient communication between the input and output, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V, this FIFO product is compatible with a wide range of systems and devices.

No. of Terminals: 132

With a high number of terminals, this FIFO product supports complex connections and configurations, enabling versatile integration in various setups.

Memory Width: 36

The memory width of 36 offers a wide data path, allowing for efficient and fast data transfer within the FIFO, enhancing overall performance.

Terminal Form: GULL WING

The GULL WING terminal form provides easy soldering and connectivity, simplifying the installation process and ensuring secure connections.

Memory Density: 36864 bit

With a high memory density of 36864 bits, this FIFO product offers ample storage capacity for data buffering and processing, meeting the demands of data-intensive applications.

Technical Specifications

FIFO SN74ACT3642-15PQR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

11 ns

Additional Features:

MAILBOX

Cycle Time:

15 ns

JESD-30 Code:

S-PQFP-G132

Length:

24.13 mm

Memory Density:

36864 bit

Memory Width:

36

No. of Functions:

1

No. of Terminals:

132

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, BUMPER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.635 mm

Terminal Position:

QUAD

Width:

24.13 mm

Trade Compliance

SN74ACT3642-15PQR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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