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SN74ACT7206-50RJ

Texas Instruments

SN74ACT7206-50RJ by Texas Instruments

SN74ACT7206-50RJ by Texas Instruments is a 16Kx9 FIFO chip carrier with 3-state output, operating at 5V. It features asynchronous mode, CMOS technology, and parallel organization. Ideal for applications requiring high-speed data transfer and temporary storage in electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,798 parts In-Stock

1+ parts

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4,798

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Vyrian

USA . 4,277 parts In-Stock

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4,277

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 457 parts In-Stock

1+ parts

$3.780

100+ parts

-

1k+ parts

$4.271

10k+ parts

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457

$3.780

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$4.271

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DigiPath Technology Company

USA . 1,371 parts In-Stock

1+ parts

$4.162

100+ parts

$3.829

1k+ parts

-

10k+ parts

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1,371

$4.162

$3.829

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ChromeModa Solutions

Germany . 5,335 parts In-Stock

1+ parts

$4.247

100+ parts

$3.483

1k+ parts

-

10k+ parts

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5,335

$4.247

$3.483

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IDEA Electronic Components Group

UK . 2,228 parts In-Stock

1+ parts

$4.247

100+ parts

-

1k+ parts

$3.822

10k+ parts

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2,228

$4.247

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$3.822

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One Stop Electronics

USA . 899 parts In-Stock

1+ parts

$9.000

100+ parts

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899

$9.000

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AZTECH Wire

Italy . 581 parts In-Stock

1+ parts

$17.062

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581

$17.062

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Corphita

USA . 805 parts In-Stock

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805

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Overview

Experience seamless data transfer and efficient storage with the SN74ACT7206-50RJ FIFO by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures high-quality products that meet the demands of various applications. This FIFO device offers unparalleled value and benefits to customers, providing reliable asynchronous operation and 3-state output characteristics. With a memory density of 147456 bits and a memory width of 9, this chip carrier package is the perfect solution for your data processing needs. Upgrade your system with the SN74ACT7206-50RJ and enjoy superior performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and reliability to the product, making it suitable for various applications.

Surface Mount: YES

Surface mount capability enables easy and efficient integration of the FIFO product onto circuit boards or systems.

Package Shape: RECTANGULAR

Rectangular package shape allows for space-efficient placement and installation in electronic devices or systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation mode offers flexibility in data transfer and communication, accommodating different timing requirements.

Nominal Supply Voltage / Vsup (V): 5

5V supply voltage ensures compatibility with standard voltage levels in electronic devices, making integration easier.

No. of Terminals: 32

With 32 terminals, the FIFO product can support multiple input and output connections, enabling efficient data processing.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides protection and efficient thermal management for the product, enhancing its performance and longevity.

Organization: 16KX9

16KX9 organization offers a good balance between storage capacity and data processing speed, suitable for a wide range of applications.

Output Characteristics: 3-STATE

3-STATE output characteristics allow for high impedance state, enabling multiple devices to share a common bus without interference.

Terminal Position: QUAD

QUAD terminal position provides stability and efficient connection points for input and output signals, ensuring reliable data transfer.

Maximum Seated Height: 3.56 mm

Low maximum seated height facilitates space-saving design and installation in compact electronic systems or devices.

Width: 11.4554 mm

11.4554mm width offers a compact form factor, suitable for applications where space is limited.

Length: 13.995 mm

13.995mm length provides a balanced size for the FIFO product, allowing for efficient placement and integration in various systems.

Technology: CMOS

CMOS technology ensures low power consumption and high efficiency, making the FIFO product energy-efficient and reliable.

Parallel or Serial: PARALLEL

Parallel data processing allows for simultaneous transfer of multiple data bits, increasing the speed and efficiency of the FIFO product.

Terminal Form: J BEND

J BEND terminal form offers secure and reliable connections, reducing the risk of signal loss or interference in data transmission.

No. of Words: 16384 words

With 16384 words capacity, the FIFO product can store and process a large amount of data, suitable for demanding applications.

Memory Width: 9

Memory width of 9 bits allows for efficient storage and processing of data, providing versatility in handling different data formats.

Terminal Pitch: 1.27 mm

1.27mm terminal pitch enables easy and secure connection to other components or circuit boards, ensuring reliable data transfer.

No. of Words Code: 16K

16K words code indicates the storage capacity of the FIFO product, allowing for the efficient handling of a large volume of data.

Memory Density: 147456 bit

High memory density of 147456 bits provides ample storage capacity for the FIFO product, suitable for data-intensive applications.

Technical Specifications

FIFO SN74ACT7206-50RJ attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

JESD-30 Code:

R-PQCC-J32

Length:

13.995 mm

Memory Density:

147456 bit

Memory Width:

9

No. of Functions:

1

No. of Terminals:

32

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Organization:

16KX9

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.4554 mm

Trade Compliance

SN74ACT7206-50RJ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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