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SN74ACT2235FN

Texas Instruments

SN74ACT2235FN by Texas Instruments

SN74ACT2235FN by Texas Instruments is a 2Kx9 BI-DIRECTIONAL FIFO chip carrier with 18432-bit memory density. It operates at up to 40MHz clock frequency and consumes a max of 230mA supply current. Ideal for applications requiring asynchronous operation, such as data buffering in commercial-grade systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,110 parts In-Stock

1+ parts

-

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6,110

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Digiode

USA . 371 parts In-Stock

1+ parts

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1k+ parts

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371

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,343 parts In-Stock

1+ parts

$3.047

100+ parts

-

1k+ parts

$3.560

10k+ parts

-

1,343

$3.047

-

$3.560

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DigiPath Technology Company

USA . 1,337 parts In-Stock

1+ parts

$3.356

100+ parts

$3.087

1k+ parts

-

10k+ parts

-

1,337

$3.356

$3.087

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ChromeModa Solutions

Germany . 2,171 parts In-Stock

1+ parts

$3.424

100+ parts

$2.808

1k+ parts

-

10k+ parts

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2,171

$3.424

$2.808

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IDEA Electronic Components Group

UK . 53 parts In-Stock

1+ parts

$3.424

100+ parts

-

1k+ parts

$3.082

10k+ parts

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53

$3.424

-

$3.082

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AZTECH Wire

Italy . 350 parts In-Stock

1+ parts

$13.532

100+ parts

-

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10k+ parts

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350

$13.532

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One Stop Electronics

USA . 1,077 parts In-Stock

1+ parts

$19.000

100+ parts

-

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1,077

$19.000

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Corphita

USA . 1,911 parts In-Stock

1+ parts

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1,911

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Overview

Experience seamless data transfer with the SN74ACT2235FN FIFO by Texas Instruments. Known for their high-quality products, Texas Instruments delivers reliable solutions for a wide range of applications. This FIFO chip offers customers value and benefits with its efficient operation and fast access time. Perfect for use in commercial-grade electronics, this chip ensures smooth performance and optimal data management. Upgrade your system with the SN74ACT2235FN and enjoy hassle-free data handling like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the FIFO, making it a reliable choice.

Operating Mode: ASYNCHRONOUS

The asynchronous operating mode allows for data to be transferred independently of a clock signal, offering flexibility and efficiency in data transmission.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making integration seamless and convenient.

Maximum Clock Frequency (fCLK): 40 MHz

With a high maximum clock frequency of 40 MHz, this FIFO can handle fast data processing and transfer speeds, ideal for demanding applications.

Memory Density: 18432 bit

The high memory density of 18432 bits provides ample storage capacity for data, ensuring efficient management and retrieval of information.

Technical Specifications

FIFO SN74ACT2235FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Maximum Clock Frequency (fCLK):

40 MHz

JESD-30 Code:

S-PQCC-J44

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Terminals:

44

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX9

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.000025 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

230 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SN74ACT2235FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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