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SN74ABT7819-12PHR

Texas Instruments

SN74ABT7819-12PHR by Texas Instruments

SN74ABT7819-12PHR by Texas Instruments is a FIFO with 512x18 organization, operating at 5V. It features a cycle time of 12.5ns, synchronous mode, and 3-STATE output characteristics. This device is ideal for applications requiring fast data transfer and storage in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,470 parts In-Stock

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7,470

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Digiode

USA . 1,626 parts In-Stock

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1,626

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 553 parts In-Stock

1+ parts

$2.021

100+ parts

-

1k+ parts

$2.546

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553

$2.021

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$2.546

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DigiPath Technology Company

USA . 844 parts In-Stock

1+ parts

$2.226

100+ parts

$2.048

1k+ parts

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844

$2.226

$2.048

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ChromeModa Solutions

Germany . 4,841 parts In-Stock

1+ parts

$2.271

100+ parts

$1.862

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4,841

$2.271

$1.862

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IDEA Electronic Components Group

UK . 501 parts In-Stock

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$2.271

100+ parts

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$2.044

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501

$2.271

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$2.044

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AZTECH Wire

Italy . 669 parts In-Stock

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$11.465

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669

$11.465

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One Stop Electronics

USA . 325 parts In-Stock

1+ parts

$24.000

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325

$24.000

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Corphita

USA . 570 parts In-Stock

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570

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Overview

Upgrade your system with the Texas Instruments SN74ABT7819-12PHR FIFO, a reliable and high-quality solution for your data storage needs. With a focus on innovation and excellence, Texas Instruments ensures top-notch performance and durability in all their products. This FIFO device is perfect for applications requiring fast and seamless data transfer, offering a cycle time of just 12.5 ns. Trust in Texas Instruments to deliver value and efficiency with every product they create, including the SN74ABT7819-12PHR FIFO.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the FIFO, ensuring a longer lifespan.

Cycle Time: 12.5 ns

With a fast cycle time of 12.5 ns, this FIFO allows for quick data transfer and processing, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

No. of Terminals: 80

Having 80 terminals allows for a higher degree of connectivity and compatibility with other components, expanding the versatility of the FIFO.

Memory Width: 18

The memory width of 18 bits provides ample storage capacity for data, making this FIFO suitable for applications requiring large amounts of information to be processed.

Technology: BICMOS

Utilizing BICMOS technology offers a balance between high-speed performance and low power consumption, making this FIFO an efficient choice for various applications.

Technical Specifications

FIFO SN74ABT7819-12PHR attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

9 ns

Cycle Time:

12.5 ns

JESD-30 Code:

R-PQFP-G80

Length:

20 mm

Memory Density:

9216 bit

Memory Width:

18

No. of Functions:

1

No. of Terminals:

80

No. of Words:

512 words

No. of Words Code:

512

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X18

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

QFP

Package Shape:

Package Style (Meter):

FLATPACK

Parallel or Serial:

PARALLEL

Qualification:

Not Qualified

Maximum Seated Height:

3.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.8 mm

Terminal Position:

QUAD

Width:

14 mm

Trade Compliance

SN74ABT7819-12PHR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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