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SN74ACT3642-20PCB

Texas Instruments

SN74ACT3642-20PCB by Texas Instruments

SN74ACT3642-20PCB by Texas Instruments is a FIFO memory with 1Kx36 organization, operating at 20ns cycle time and 50MHz clock frequency. It features a CMOS technology, operates at 5V supply voltage, and has a memory density of 36864 bits. This device is suitable for applications requiring fast synchronous data transfer in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,849 parts In-Stock

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6,849

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Digiode

USA . 1,846 parts In-Stock

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1,846

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,111 parts In-Stock

1+ parts

$2.639

100+ parts

-

1k+ parts

$3.129

10k+ parts

-

1,111

$2.639

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$3.129

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DigiPath Technology Company

USA . 1,495 parts In-Stock

1+ parts

$2.906

100+ parts

$2.673

1k+ parts

-

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1,495

$2.906

$2.673

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ChromeModa Solutions

Germany . 3,335 parts In-Stock

1+ parts

$2.965

100+ parts

$2.431

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3,335

$2.965

$2.431

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IDEA Electronic Components Group

UK . 1,659 parts In-Stock

1+ parts

$2.965

100+ parts

-

1k+ parts

$2.668

10k+ parts

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1,659

$2.965

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$2.668

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AZTECH Wire

Italy . 548 parts In-Stock

1+ parts

$15.145

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548

$15.145

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One Stop Electronics

USA . 1,308 parts In-Stock

1+ parts

$18.000

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1,308

$18.000

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Corphita

USA . 735 parts In-Stock

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735

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the SN74ACT3642-20PCB FIFO memory IC. This cutting-edge device offers seamless data storage and retrieval in a variety of applications, thanks to its high-speed operation and robust design. Whether you're working on networking equipment, telecommunications systems, or industrial control applications, this FIFO memory IC delivers exceptional performance and efficiency. Trust Texas Instruments for superior technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good durability and resistance to environmental factors, ensuring a longer lifespan for the product.

Cycle Time: 20 ns

The fast cycle time of 20 ns allows for efficient data transfer and processing, making this FIFO a suitable choice for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures proper synchronization of data transfers, reducing the risk of errors and increasing overall system reliability.

Nominal Supply Voltage / Vsup (V): 5

A supply voltage of 5V is commonly used and easily accessible, making this FIFO compatible with a wide range of systems and applications.

Maximum Clock Frequency (fCLK): 50 MHz

With a high maximum clock frequency of 50 MHz, this FIFO can support fast data processing and retrieval, suitable for demanding tasks.

Memory IC Type: BI-DIRECTIONAL FIFO

The bi-directional FIFO design allows for simultaneous read and write operations, enhancing overall data throughput and system efficiency.

Technical Specifications

FIFO SN74ACT3642-20PCB attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

13 ns

Additional Features:

MAILBOX

Maximum Clock Frequency (fCLK):

50 MHz

Cycle Time:

20 ns

JESD-30 Code:

S-PQFP-G120

Length:

14 mm

Memory Density:

36864 bit

Memory IC Type:

Memory Width:

36

No. of Functions:

1

No. of Terminals:

120

No. of Words:

1024 words

No. of Words Code:

1K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1KX36

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP120,.63SQ,16

Package Shape:

Package Style (Meter):

FLATPACK, HEAT SINK/SLUG, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.4 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Trade Compliance

SN74ACT3642-20PCB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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