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SN74ACT2236-30FN

Texas Instruments

SN74ACT2236-30FN by Texas Instruments

SN74ACT2236-30FN by Texas Instruments is a 2Kx9 BI-DIRECTIONAL FIFO chip carrier with 3-STATE output, operating at 33MHz with a cycle time of 30.3ns. Ideal for industrial applications, it features synchronous operation and a memory density of 18432 bits, making it suitable for high-speed parallel data transfer.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,470 parts In-Stock

1+ parts

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6,470

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Digiode

USA . 3,061 parts In-Stock

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3,061

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PAR Electronics

UK . 34 parts In-Stock

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34

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 652 parts In-Stock

1+ parts

$3.000

100+ parts

-

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652

$3.000

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Parana Technologies

USA . 195 parts In-Stock

1+ parts

$3.127

100+ parts

-

1k+ parts

$3.647

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195

$3.127

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$3.647

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DigiPath Technology Company

USA . 1,830 parts In-Stock

1+ parts

$3.443

100+ parts

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1,830

$3.443

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ChromeModa Solutions

Germany . 4,864 parts In-Stock

1+ parts

$3.513

100+ parts

$2.881

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4,864

$3.513

$2.881

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IDEA Electronic Components Group

UK . 303 parts In-Stock

1+ parts

$3.513

100+ parts

-

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$3.162

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303

$3.513

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$3.162

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$4.925

100+ parts

$4.482

1k+ parts

$4.038

10k+ parts

-

60

$4.925

$4.482

$4.038

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AZTECH Wire

Italy . 385 parts In-Stock

1+ parts

$6.190

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385

$6.190

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Corphita

USA . 1,203 parts In-Stock

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1,203

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Overview

Elevate your electronic designs with the Texas Instruments SN74ACT2236-30FN FIFO memory IC. Built by a trusted manufacturer, this high-quality chip offers seamless synchronous operation and 3-state output characteristics. Perfect for industrial applications, this chip features a fast cycle time of 30.3 ns and a maximum clock frequency of 33 MHz. With a compact square package style and 2Kx9 organization, this chip provides optimal performance in a small footprint. Trust Texas Instruments to deliver reliable, efficient solutions for your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy packaging provides durability and protection for the components inside, making this product resistant to damage and suitable for various environments.

Cycle Time: 30.3 ns

Fast cycle time of 30.3 ns ensures quick and efficient data retrieval and processing, making this FIFO ideal for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures reliable and coordinated data transfer, making this FIFO suitable for synchronous systems where timing is critical.

Memory Density: 18432 bit

High memory density of 18432 bit allows for storage of a large amount of data in a compact space, making this FIFO suitable for applications requiring high data capacity.

Maximum Clock Frequency (fCLK): 33 MHz

With a maximum clock frequency of 33 MHz, this FIFO can handle high-speed data processing, making it ideal for applications that require quick data transfer.

Technical Specifications

FIFO SN74ACT2236-30FN attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

Additional Features:

BYPASS XCVR

Maximum Clock Frequency (fCLK):

33 MHz

Cycle Time:

30.3 ns

JESD-30 Code:

S-PQCC-J44

Length:

16.5862 mm

Memory Density:

18432 bit

Memory IC Type:

Memory Width:

9

No. of Functions:

1

No. of Terminals:

44

No. of Words:

2048 words

No. of Words Code:

2K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2KX9

Output Characteristics:

3-STATE

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC44,.7SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Maximum Standby Current:

.0004 Amp

Sub-Category:

FIFOs

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

16.5862 mm

Trade Compliance

SN74ACT2236-30FN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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