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PDRV8353SRTA

Texas Instruments

PDRV8353SRTA by Texas Instruments

PDRV8353SRTA by Texas Instruments is a MOSFET gate driver with a max supply voltage of 95V and operating temperature range from -40 to 125°C. It features a half-bridge based interface IC type, suitable for automotive applications due to its low profile chip carrier package style and high side driver capability.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,048 parts In-Stock

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Nova Conductors

Japan . 1,000 parts In-Stock

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Digiode

USA . 497 parts In-Stock

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Corohmni

South Africa . 64 parts In-Stock

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$3.963

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64

$3.963

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Parana Technologies

USA . 212 parts In-Stock

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$6.356

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$7.109

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212

$6.356

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DigiPath Technology Company

USA . 1,195 parts In-Stock

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$6.999

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$6.439

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$6.999

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IDEA Electronic Components Group

UK . 2,305 parts In-Stock

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$7.142

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$6.428

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$7.142

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ChromeModa Solutions

Germany . 589 parts In-Stock

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$7.142

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$5.856

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589

$7.142

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$7.926

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$7.530

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$7.530

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$7.926

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Ampacity Inc.

Singapore . 603 parts In-Stock

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$9.500

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$9.500

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AZTECH Wire

Italy . 558 parts In-Stock

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$16.827

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Semicontronic

India . 1,545 parts In-Stock

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$17.500

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$17.062

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$16.975

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One Stop Electronics

USA . 626 parts In-Stock

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$28.500

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Continental Prestige Electronics

USA . 6,909 parts In-Stock

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Robosynatics

Brazil . 5,000 parts In-Stock

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Lucentia Tech

USA . 5,000 parts In-Stock

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Corphita

USA . 4,001 parts In-Stock

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Argo Parts USA

USA . 2,426 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Elevate your design with the Texas Instruments PDRV8353SRTA MOSFET Gate Driver. Crafted with precision and expertise by a trusted manufacturer, this innovative chip carrier offers superior performance in automotive applications. Experience seamless integration and enhanced efficiency with a very thin profile and high side driver capability. Trust in the quality and reliability of Texas Instruments to deliver cutting-edge technology that exceeds expectations. Choose the PDRV8353SRTA for unparalleled value and unmatched benefits in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mountable makes this product easy to integrate into circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 95 V

The high maximum supply voltage allows for flexibility in various applications, accommodating higher voltage requirements.

Package Shape: SQUARE

The square package shape is efficient for space utilization and layout on a PCB, making it easier to design and arrange components.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Nominal Supply Voltage: 48 V

The nominal supply voltage of 48V is suitable for many industrial and automotive applications, providing a standard power source for the device.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge based MOSFET driver interface IC type offers efficient switching capabilities for MOSFETs, allowing for precise control and optimal performance in driving high-power devices.

Technical Specifications

MOSFET Gate Drivers PDRV8353SRTA attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N40

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

40

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.51 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

95 V

Minimum Supply Voltage:

6 V

Nominal Supply Voltage:

48 V

Maximum Supply Voltage-1:

75 V

Minimum Supply Voltage-1:

9 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

PDRV8353SRTA Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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