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PDRV8706HRHBQ1

Texas Instruments

PDRV8706HRHBQ1 by Texas Instruments

PDRV8706HRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and min operating temperature of -40°C. It features push-pull output characteristics, suitable for automotive applications requiring high side drivers. With a turn-on time of 0.85us and turn-off time of 0.6us, it offers fast switching performance in a compact chip carrier package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,754 parts In-Stock

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2,754

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Digiode

USA . 1,181 parts In-Stock

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1,181

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Corohmni

South Africa . 565 parts In-Stock

1+ parts

$3.266

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565

$3.266

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One Stop Electronics

USA . 834 parts In-Stock

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$4.500

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834

$4.500

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Parana Technologies

USA . 1,523 parts In-Stock

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$10.473

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$10.986

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1,523

$10.473

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$10.986

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ChromeModa Solutions

Germany . 6,305 parts In-Stock

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$11.767

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$9.649

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6,305

$11.767

$9.649

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IDEA Electronic Components Group

UK . 1,563 parts In-Stock

1+ parts

$11.767

100+ parts

$11.179

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$10.590

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1,563

$11.767

$11.179

$10.590

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AZTECH Wire

Italy . 447 parts In-Stock

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$19.071

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447

$19.071

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Ampacity Inc.

Singapore . 707 parts In-Stock

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$32.500

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707

$32.500

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Semicontronic

India . 129 parts In-Stock

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$48.500

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$47.288

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$47.045

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129

$48.500

$47.288

$47.045

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Corphita

USA . 2,987 parts In-Stock

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Continental Prestige Electronics

USA . 2,315 parts In-Stock

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DigiPath Technology Company

USA . 2,286 parts In-Stock

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$10.609

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$10.609

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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650

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Argo Parts USA

USA . 377 parts In-Stock

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377

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Experience the superior quality and reliability of Texas Instruments with the PDRV8706HRHBQ1 MOSFET Gate Driver. Designed for automotive applications, this high-performance chip carrier offers a wide supply voltage range and operating temperature, ensuring optimal functionality in challenging environments. With its compact design and push-pull output characteristics, customers can trust in the seamless operation and efficiency that this driver brings to their projects. Upgrade your system today with Texas Instruments' advanced technology and enhance your performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC

PLASTIC material is lightweight and durable, making it suitable for various applications and easy to handle.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this gate driver can be used in a wide range of applications without risk of damage from overvoltage.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the gate driver meets automotive industry standards for reliability and quality, making it suitable for automotive applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand high-temperature environments and ensures reliable performance under varying conditions.

Output Characteristics: PUSH-PULL

PUSH-PULL output configuration provides higher efficiency and faster switching speeds, making this gate driver suitable for high-performance applications.

High Side Driver: YES

Having a high side driver allows for driving both high-side and low-side MOSFETs, enabling full bridge configurations and improving overall system efficiency.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this gate driver meets strict automotive industry standards for performance and reliability, making it a reliable choice for automotive electronic systems.

Technical Specifications

MOSFET Gate Drivers PDRV8706HRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

Length:

5 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

5 mm

Trade Compliance

PDRV8706HRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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