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PDRV8350SRTV

Texas Instruments

PDRV8350SRTV by Texas Instruments

PDRV8350SRTV by Texas Instruments is a MOSFET gate driver with a max supply voltage of 95V and operating temperature range of -40 to 125°C. It features a half-bridge based interface IC type, suitable for automotive applications due to its high side driver capability and compact chip carrier package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,664 parts In-Stock

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4,664

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Digiode

USA . 3,255 parts In-Stock

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3,255

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Distributors (Availability)

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AZTECH Wire

Italy . 231 parts In-Stock

1+ parts

$7.955

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231

$7.955

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Parana Technologies

USA . 717 parts In-Stock

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$8.422

100+ parts

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$9.059

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717

$8.422

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$9.059

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ChromeModa Solutions

Germany . 3,970 parts In-Stock

1+ parts

$9.463

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$7.760

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3,970

$9.463

$7.760

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IDEA Electronic Components Group

UK . 1,808 parts In-Stock

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$9.463

100+ parts

$8.990

1k+ parts

$8.517

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1,808

$9.463

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$8.517

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One Stop Electronics

USA . 1,075 parts In-Stock

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$13.500

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1,075

$13.500

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DigiPath Technology Company

USA . 722 parts In-Stock

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$8.532

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722

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$8.532

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Corphita

USA . 367 parts In-Stock

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Overview

Power up your projects with the PDRV8350SRTV by Texas Instruments, a high-quality MOSFET gate driver that offers unmatched reliability and performance. Designed to meet the demands of automotive applications, this chip carrier package features a very thin profile and heat sink/slug for efficient heat dissipation. With a wide supply voltage range and high-side driver capabilities, the PDRV8350SRTV provides superior control and protection for your power systems. Trust in Texas Instruments to deliver cutting-edge solutions for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal and mechanical properties, making the product durable and reliable.

Surface Mount: YES

Enables easy and efficient installation on circuit boards without the need for additional hardware.

Maximum Supply Voltage: 95 V

Allows for compatibility with a wide range of applications requiring higher voltage levels.

Package Shape: SQUARE

Optimal design for efficient use of space and easy integration into circuit layouts.

No. of Terminals: 32

Provides multiple connection points for versatile configuration and connectivity options.

Minimum Operating Temperature: -40 °C

Ensures reliable performance even in extreme cold environments.

Peak Reflow Temperature °C: 260

Withstands high-temperature reflow processes during assembly, ensuring product reliability.

Nominal Supply Voltage: 48 V

Suitable for applications requiring stable and efficient voltage supply.

Terminal Pitch: 0.5 mm

Allows for compact design and efficient routing of connections on the circuit board.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

Provides efficient control and management of MOSFETs in half-bridge configurations, enhancing overall performance.

Technical Specifications

MOSFET Gate Drivers PDRV8350SRTV attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

.51 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

95 V

Minimum Supply Voltage:

6 V

Nominal Supply Voltage:

48 V

Maximum Supply Voltage-1:

75 V

Minimum Supply Voltage-1:

9 V

Nominal Supply Voltage-1:

10 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

PDRV8350SRTV Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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