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PDRV8106SRHBQ1

Texas Instruments

PDRV8106SRHBQ1 by Texas Instruments

PDRV8106SRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features push-pull output characteristics, complementary polarity, and a turn-on time of 0.85µs. Ideal for automotive applications requiring high side drivers in a surface-mount package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,049 parts In-Stock

1+ parts

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4,049

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Digiode

USA . 3,832 parts In-Stock

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3,832

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,119 parts In-Stock

1+ parts

$2.812

100+ parts

$261.091

1k+ parts

$2.530

10k+ parts

-

1,119

$2.812

$261.091

$2.530

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DigiPath Technology Company

USA . 340 parts In-Stock

1+ parts

$3.096

100+ parts

$2.848

1k+ parts

-

10k+ parts

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340

$3.096

$2.848

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ChromeModa Solutions

Germany . 6,052 parts In-Stock

1+ parts

$3.159

100+ parts

$2.590

1k+ parts

-

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6,052

$3.159

$2.590

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IDEA Electronic Components Group

UK . 120 parts In-Stock

1+ parts

$3.159

100+ parts

-

1k+ parts

$2.843

10k+ parts

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120

$3.159

-

$2.843

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AZTECH Wire

Italy . 642 parts In-Stock

1+ parts

$11.624

100+ parts

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642

$11.624

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One Stop Electronics

USA . 1,435 parts In-Stock

1+ parts

$31.500

100+ parts

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1,435

$31.500

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Corphita

USA . 3,394 parts In-Stock

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3,394

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Overview

Enhance your automotive applications with the high-quality PDRV8106SRHBQ1 MOSFET Gate Driver by Texas Instruments. With a focus on reliability and performance, this product offers customers unparalleled value and benefits. Whether you're looking to optimize power efficiency or streamline your system design, this innovative product delivers seamless operation and precise control. Trust in Texas Instruments for cutting-edge solutions that exceed expectations. Elevate your projects with the PDRV8106SRHBQ1 and experience the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package body material provides durability and reliability, making this product suitable for automotive applications where ruggedness is essential.

Surface Mount: YES

The surface mount capability allows for easy and efficient installation onto PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this gate driver can support a wide range of applications and provide flexibility in power supply selection.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that this gate driver meets automotive quality standards, making it a reliable choice for automotive electronics applications.

Package Shape: SQUARE

The square package shape offers a compact and space-saving design, making it ideal for applications where board space is limited.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows this gate driver to operate reliably in harsh environments, such as automotive engine compartments.

Output Characteristics: PUSH-PULL

The push-pull output characteristics provide efficient performance and high-speed switching capabilities, making this gate driver suitable for demanding applications.

High Side Driver: YES

The presence of a high side driver enhances the versatility of this gate driver, allowing it to control both high side and low side MOSFETs in a circuit.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that this gate driver can withstand temperature fluctuations and harsh operating conditions typical in automotive applications.

Technical Specifications

MOSFET Gate Drivers PDRV8106SRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Screening Level:

AEC-Q100

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Trade Compliance

PDRV8106SRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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