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PDRV8706HQRHBQ1

Texas Instruments

PDRV8706HQRHBQ1 by Texas Instruments

PDRV8706HQRHBQ1 by Texas Instruments is a MOSFET gate driver with 32 terminals and push-pull output. It operates in automotive applications, with a supply voltage range of 3V to 37V and temperature range of -40°C to 125°C. The driver has a turn-on time of 0.85us and turn-off time of 0.6us, making it suitable for high-side driving tasks.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,338 parts In-Stock

1+ parts

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3,338

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Digiode

USA . 3,015 parts In-Stock

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3,015

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Distributors (Availability)

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AZTECH Wire

Italy . 270 parts In-Stock

1+ parts

$5.480

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270

$5.480

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Parana Technologies

USA . 2,350 parts In-Stock

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$10.215

100+ parts

-

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$10.749

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2,350

$10.215

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$10.749

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ChromeModa Solutions

Germany . 1,303 parts In-Stock

1+ parts

$11.477

100+ parts

$9.411

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1,303

$11.477

$9.411

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IDEA Electronic Components Group

UK . 602 parts In-Stock

1+ parts

$11.477

100+ parts

$10.903

1k+ parts

$10.329

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602

$11.477

$10.903

$10.329

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One Stop Electronics

USA . 282 parts In-Stock

1+ parts

$12.500

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282

$12.500

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Corphita

USA . 863 parts In-Stock

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863

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DigiPath Technology Company

USA . 837 parts In-Stock

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$10.348

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837

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$10.348

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Overview

Experience superior performance and reliability with the PDRV8706HQRHBQ1 by Texas Instruments, a leading manufacturer known for delivering high-quality MOSFET Gate Drivers. Designed for automotive applications, this product offers a wide range of benefits including precise control, efficient power management, and enhanced durability. With its advanced features and innovative technology, the PDRV8706HQRHBQ1 provides unmatched value for customers looking to optimize their system performance. Trust Texas Instruments to deliver cutting-edge solutions that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material - PLASTIC/EPOXY

This material provides good protection and insulation for the internal components of the gate driver, ensuring durability and reliability.

Surface Mount - YES

Easy installation and space-saving design make this gate driver suitable for compact electronic applications.

Maximum Supply Voltage - 5.5 V

Can operate efficiently within a safe voltage range, preventing damage to the gate driver or connected components.

Screening Level - AEC-Q100

Meets automotive industry standards for quality and reliability, making it a suitable choice for automotive applications.

Maximum Operating Temperature - 125 °C

Can withstand high temperature environments, ensuring reliable performance in challenging conditions.

Output Characteristics - PUSH-PULL

Provides efficient and reliable switching of MOSFETs, improving overall performance of the gate driver.

High Side Driver - YES

Enables driving high-side MOSFETs directly, simplifying the circuit design and enhancing performance.

Temperature Grade - AUTOMOTIVE

Designed to meet automotive industry standards for temperature range and reliability, making it suitable for automotive applications.

Nominal Output Peak Current Limit - 0.062 A

Provides sufficient current capabilities for driving MOSFETs in various applications.

Interface IC Type - HALF BRIDGE BASED MOSFET DRIVER

Enables efficient and effective control of MOSFETs in half-bridge configurations, making it suitable for power electronics applications.

Technical Specifications

MOSFET Gate Drivers PDRV8706HQRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Screening Level:

AEC-Q100

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Trade Compliance

PDRV8706HQRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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