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PDRV8705SRHBQ1

Texas Instruments

PDRV8705SRHBQ1 by Texas Instruments

PDRV8705SRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and min operating temperature of -40°C. It features push-pull output characteristics, suitable for automotive applications due to its AEC-Q100 screening level. This chip carrier package has a very thin profile, making it ideal for space-constrained designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,173 parts In-Stock

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Vyrian

USA . 3,564 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Ampacity Inc.

Singapore . 766 parts In-Stock

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$9.500

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$9.500

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One Stop Electronics

USA . 824 parts In-Stock

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$10.500

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$10.500

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Parana Technologies

USA . 220 parts In-Stock

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$12.185

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$12.598

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220

$12.185

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$12.598

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DigiPath Technology Company

USA . 324 parts In-Stock

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$13.417

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$12.344

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324

$13.417

$12.344

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ChromeModa Solutions

Germany . 5,938 parts In-Stock

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$13.691

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$11.227

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$13.691

$11.227

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IDEA Electronic Components Group

UK . 76 parts In-Stock

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$13.691

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$13.006

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$12.322

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76

$13.691

$13.006

$12.322

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AZTECH Wire

Italy . 602 parts In-Stock

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$16.695

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Argo Parts USA

USA . 2,626 parts In-Stock

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Continental Prestige Electronics

USA . 1,813 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Corphita

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Overview

Experience unparalleled quality and reliability with the PDRV8705SRHBQ1 from Texas Instruments, a leading manufacturer in the industry. Designed for automotive applications, this MOSFET gate driver offers exceptional value and benefits to customers. With its high side driver, complementary output polarity, and push-pull output characteristics, this product ensures optimal performance in demanding environments. Trust Texas Instruments for cutting-edge technology that delivers superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the gate driver, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 5.5 V

With a high maximum supply voltage, this gate driver can handle a variety of power requirements, making it versatile for different applications.

Screening Level: AEC-Q100

Being AEC-Q100 compliant ensures that this gate driver meets robust automotive industry standards for reliability and performance.

Package Shape: SQUARE

The square shape allows for efficient use of space on the circuit board, making it ideal for compact designs.

Maximum Supply Voltage-1: 37 V

This high maximum supply voltage provides additional headroom for handling power spikes or fluctuations, enhancing the reliability of the gate driver.

No. of Terminals: 32

Having a high number of terminals allows for greater connectivity options and flexibility in the circuit layout.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This package style combination offers excellent heat dissipation and space-saving benefits, making it suitable for demanding applications.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage ensures compatibility with a wide range of power sources, enhancing the versatility of the gate driver.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this gate driver can withstand harsh environmental conditions, making it suitable for automotive and industrial applications.

Technical Specifications

MOSFET Gate Drivers PDRV8705SRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

Length:

5 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

5 mm

Trade Compliance

PDRV8705SRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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