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PDRV8705HRHBQ1

Texas Instruments

PDRV8705HRHBQ1 by Texas Instruments

PDRV8705HRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and operating temperature range of -40 to 125°C. It features push-pull output, complementary polarity, and half-bridge interface IC type. Ideal for automotive applications requiring high side drivers with fast turn-on/off times.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,748 parts In-Stock

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Digiode

USA . 477 parts In-Stock

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477

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Distributors (Availability)

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AZTECH Wire

Italy . 604 parts In-Stock

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$8.642

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604

$8.642

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Parana Technologies

USA . 2,170 parts In-Stock

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$9.195

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$9.841

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2,170

$9.195

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$9.841

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DigiPath Technology Company

USA . 334 parts In-Stock

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$10.125

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$9.315

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334

$10.125

$9.315

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IDEA Electronic Components Group

UK . 2,124 parts In-Stock

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$10.332

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$9.815

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$9.299

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2,124

$10.332

$9.815

$9.299

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ChromeModa Solutions

Germany . 334 parts In-Stock

1+ parts

$10.332

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$8.472

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334

$10.332

$8.472

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One Stop Electronics

USA . 513 parts In-Stock

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$47.500

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Corphita

USA . 3,556 parts In-Stock

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Overview

Unlock the power of your automotive applications with the PDRV8705HRHBQ1 by Texas Instruments. As a leader in MOSFET Gate Drivers, Texas Instruments delivers unparalleled quality and reliability. This versatile chip carrier package offers a very thin profile and a wide operating temperature range, making it ideal for a variety of automotive environments. With complementary output polarity and standard input characteristics, this half bridge-based driver provides precise control and efficient performance. Trust Texas Instruments to enhance the functionality and durability of your automotive systems with the PDRV8705HRHBQ1. Drive confidently with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for automotive applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and simplifying assembly.

Maximum Supply Voltage: 5.5 V

A high maximum supply voltage of 5.5 V provides compatibility with a wide range of power sources, making it versatile for various applications.

Screening Level: AEC-Q100

The AEC-Q100 screening level ensures high reliability and quality standards, making the product suitable for automotive-grade applications.

Package Shape: SQUARE

The square package shape allows for efficient PCB layout and space utilization, making it easy to integrate into circuit designs.

Maximum Supply Voltage-1: 37 V

With a high maximum supply voltage of 37 V, the product can handle high power requirements and voltage levels, making it robust and reliable.

No. of Terminals: 32

Having 32 terminals provides ample connectivity options and flexibility for complex circuit configurations and applications.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The chip carrier style, heat sink/slug, and thin profile design enhance thermal management and heat dissipation, ensuring optimal performance and reliability.

Minimum Supply Voltage: 4.5 V

The low minimum supply voltage of 4.5 V allows for efficient power management and operation in low-power or battery-powered systems.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures reliable performance under extreme environmental conditions, suitable for automotive applications.

Output Characteristics: PUSH-PULL

The push-pull output configuration provides improved efficiency and reduced power losses, enhancing overall performance and reliability.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows for reliable operation in cold environments or under extreme temperature conditions.

Terminal Position: QUAD

The quad terminal position facilitates easy and secure connections, ensuring stability and reliability in the circuit.

Maximum Seated Height: 1 mm

The low maximum seated height of 1 mm allows for compact and space-saving designs, ideal for applications with size constraints.

High Side Driver: YES

Having a high side driver capability enables efficient switching and control of power sources, enhancing the product's performance and versatility.

Output Polarity: COMPLEMENTARY

Complementary output polarity allows for balanced and efficient signal processing, ensuring accurate and reliable operation in dual-channel applications.

Input Characteristics: STANDARD

Standard input characteristics provide compatibility with common control signals and interfaces, ensuring ease of integration and operation.

Nominal Supply Voltage: 5 V

A nominal supply voltage of 5 V provides stable power delivery for consistent performance, making it suitable for a wide range of applications.

Maximum Supply Current: 5.5 mA

The low maximum supply current of 5.5 mA minimizes power consumption and heat dissipation, improving energy efficiency and prolonging product lifespan.

Turn-on Time: 0.85 us

The fast turn-on time of 0.85 us ensures rapid response and switching speed, enhancing the product's performance in high-speed applications.

Nominal Output Peak Current Limit: 0.062 A

The nominal output peak current limit of 0.062 A provides protection against overcurrent conditions, ensuring safe and reliable operation.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half-bridge based MOSFET driver interface IC type enables efficient and precise control of power MOSFETs, enhancing the product's performance in power electronics applications.

Turn-off Time: 0.6 us

The fast turn-off time of 0.6 us ensures quick and efficient switching, reducing power losses and improving overall efficiency.

Technical Specifications

MOSFET Gate Drivers PDRV8705HRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

Length:

5 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

5 mm

Trade Compliance

PDRV8705HRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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