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PDRV8705HQRHBQ1

Texas Instruments

PDRV8705HQRHBQ1 by Texas Instruments

PDRV8705HQRHBQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 37V and min operating temperature of -40°C. It features push-pull output characteristics, suitable for automotive applications due to its AEC-Q100 screening level and high side driver capability. The interface IC type is half bridge based, with turn-on time of 0.85us and turn-off time of 0.6us.

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Vyrian

USA . 4,452 parts In-Stock

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Digiode

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Parana Technologies

USA . 2,269 parts In-Stock

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$6.746

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$7.418

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$7.418

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DigiPath Technology Company

USA . 1,998 parts In-Stock

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$7.428

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$6.834

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IDEA Electronic Components Group

UK . 1,163 parts In-Stock

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$7.580

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$6.822

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ChromeModa Solutions

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$7.580

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$6.216

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579

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AZTECH Wire

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One Stop Electronics

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Corphita

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Overview

Unlock the power of advanced technology with the PDRV8705HQRHBQ1 from Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality MOSFET Gate Drivers that are perfect for a wide range of applications. With a maximum supply voltage of 37V and AEC-Q100 screening level, this chip carrier package offers exceptional performance in automotive environments. Experience seamless operation and reliable output characteristics with the push-pull design and complementary output polarity. Trust Texas Instruments to provide cutting-edge solutions that enhance your products and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the gate driver.

Surface Mount: YES

Easy installation and compact design make this gate driver suitable for a variety of applications, especially where space is limited.

Maximum Supply Voltage: 5.5 V

This gate driver can handle a maximum supply voltage of 5.5V, making it compatible with a wide range of systems and circuits.

Screening Level: AEC-Q100

AEC-Q100 certification ensures that this gate driver has been tested for automotive applications, providing reliability and quality assurance.

Package Shape: SQUARE

The square package shape allows for easier mounting and compatibility with standard PCB layouts.

Maximum Supply Voltage-1: 37 V

With a maximum supply voltage of 37V, this gate driver can handle higher power requirements and voltage levels for versatile use.

No. of Terminals: 32

The high number of terminals allows for greater connectivity options and flexibility in circuit design.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

This package style offers efficient heat dissipation and a compact profile, ideal for space-constrained applications.

Minimum Supply Voltage-1: 4.9 V

With a minimum supply voltage of 4.9V, this gate driver can function effectively even with lower power input.

Minimum Supply Voltage: 3 V

The low minimum supply voltage requirement allows for compatibility with a wide range of power sources and systems.

Maximum Operating Temperature: 125 °C

The high operating temperature range ensures reliable performance even in challenging environmental conditions.

Output Characteristics: PUSH-PULL

The push-pull output configuration provides efficient signal transmission and improved response times.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature makes this gate driver suitable for use in extreme cold environments.

Terminal Position: QUAD

The quad terminal position allows for easy connection and integration into circuit layouts.

Maximum Seated Height: 1 mm

The low profile design with a maximum seated height of 1mm allows for easy installation in compact spaces.

Width: 5 mm

The slim width of 5mm contributes to the compact and space-saving design of this gate driver.

Output Polarity: COMPLEMENTARY

Complementary output polarity ensures efficient signal transmission and improved noise immunity in the circuit.

High Side Driver: YES

The high-side driver capability allows for versatile control of power electronics in various applications.

Length: 5 mm

The compact length of 5mm contributes to a space-saving design, suitable for applications with limited space.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature rating ensures reliable performance under harsh operating conditions typically found in automotive applications.

Terminal Form: NO LEAD

The no-lead terminal form offers a reliable connection for increased durability and reduced risk of damage during installation.

Maximum Supply Current: 5.5 mA

With a maximum supply current of 5.5mA, this gate driver offers efficient power usage and lower energy consumption.

Input Characteristics: STANDARD

Standard input characteristics make this gate driver compatible with a wide range of control signals and systems.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V ensures compatibility with standard power sources and control systems.

Turn-on Time: 0.85 us

The fast turn-on time of 0.85us ensures quick response and efficient operation of the gate driver.

Terminal Pitch: 0.5 mm

The fine terminal pitch of 0.5mm allows for precise connections and compact design, ideal for space-constrained applications.

Nominal Supply Voltage-1: 13.5 V

The nominal supply voltage-1 of 13.5V allows for efficient power usage and compatibility with a range of systems.

Nominal Output Peak Current Limit: 0.062 A

The nominal output peak current limit of 0.062A provides reliable current protection and ensures safe operation of the gate driver.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half-bridge based MOSFET driver interface offers efficient control and switching capabilities for power electronics applications.

Turn-off Time: 0.6 us

The fast turn-off time of 0.6us ensures quick response and efficient operation of the gate driver, improving overall system performance.

Technical Specifications

MOSFET Gate Drivers PDRV8705HQRHBQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

S-PQCC-N32

Length:

5 mm

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

PUSH-PULL

Nominal Output Peak Current Limit:

.062 A

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Current:

5.5 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

37 V

Minimum Supply Voltage-1:

4.9 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Turn-off Time:

.6 us

Turn-on Time:

.85 us

Width:

5 mm

Trade Compliance

PDRV8705HQRHBQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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