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PDRV8245HRXZQ1

Texas Instruments

PDRV8245HRXZQ1 by Texas Instruments

PDRV8245HRXZQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 35V, operating temperature range of -40 to 125°C, and output current up to 32A. Ideal for automotive applications, this chip carrier package features a half bridge based interface IC type and AEC-Q100 screening level.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,042 parts In-Stock

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Digiode

USA . 1,781 parts In-Stock

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1,781

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Distributors (Availability)

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Parana Technologies

USA . 1,247 parts In-Stock

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$4.214

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$4.650

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$4.214

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$4.650

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ChromeModa Solutions

Germany . 4,528 parts In-Stock

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$4.735

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$3.883

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$4.735

$3.883

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IDEA Electronic Components Group

UK . 2,161 parts In-Stock

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$4.735

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$4.262

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Corohmni

South Africa . 215 parts In-Stock

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$5.406

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215

$5.406

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AZTECH Wire

Italy . 724 parts In-Stock

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$12.449

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724

$12.449

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Ampacity Inc.

Singapore . 1,237 parts In-Stock

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$25.500

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$25.500

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One Stop Electronics

USA . 1,069 parts In-Stock

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$26.500

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1,069

$26.500

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Argo Parts USA

USA . 3,243 parts In-Stock

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Corphita

USA . 1,844 parts In-Stock

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Continental Prestige Electronics

USA . 1,222 parts In-Stock

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DigiPath Technology Company

USA . 347 parts In-Stock

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$4.269

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347

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$4.269

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Experience superior performance and reliability with the Texas Instruments PDRV8245HRXZQ1 MOSFET Gate Driver. Crafted by a trusted industry leader, this high-quality driver is designed for automotive applications, ensuring optimal functionality even in challenging environments. With its advanced technology and robust construction, the PDRV8245HRXZQ1 delivers exceptional value and efficiency to customers, making it the perfect choice for your next project. Trust in Texas Instruments for cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection to the components inside, making this product reliable for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and convenient installation onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 35 V

With a high maximum supply voltage of 35V, this gate driver can handle a wide range of power requirements, suitable for various applications.

Screening Level: AEC-Q100

This gate driver is compliant with automotive quality standards ensuring reliability and performance in automotive applications.

Output Characteristics: OPEN-DRAIN

The open-drain output allows for flexibility in connecting to different types of MOSFETs, enhancing compatibility with a variety of systems.

Maximum Output Current: 32 A

The high maximum output current of 32A enables this gate driver to drive high-power MOSFETs efficiently, making it suitable for demanding applications.

Technology: BICMOS

Utilizing BiCMOS technology combines the advantages of both bipolar and CMOS technologies, offering high speed and low power consumption for optimal performance.

Technical Specifications

MOSFET Gate Drivers PDRV8245HRXZQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PQCC-N16

Length:

5.5 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Maximum Output Current:

32 A

Nominal Output Peak Current Limit:

32 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

35 V

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage-1:

35 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Width:

3.5 mm

Trade Compliance

PDRV8245HRXZQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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