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PDRV8243HRXYQ1

Texas Instruments

PDRV8243HRXYQ1 by Texas Instruments

PDRV8243HRXYQ1 by Texas Instruments is a MOSFET gate driver with a max supply voltage of 35V, operating temperature range of -40 to 125°C, and output current up to 12A. It is designed for automotive applications requiring a high-performance half-bridge based driver in a compact chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,105 parts In-Stock

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Digiode

USA . 2,226 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Advanced Electronics

New Zealand . 40 parts In-Stock

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$5.022

100+ parts

$4.771

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$4.771

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40

$5.022

$4.771

$4.771

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AZTECH Wire

Italy . 569 parts In-Stock

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$5.115

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569

$5.115

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Parana Technologies

USA . 2,003 parts In-Stock

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$5.192

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$5.798

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$5.192

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DigiPath Technology Company

USA . 2,031 parts In-Stock

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$5.717

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$5.717

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ChromeModa Solutions

Germany . 3,300 parts In-Stock

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$5.834

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$4.784

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$5.834

$4.784

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IDEA Electronic Components Group

UK . 1,301 parts In-Stock

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$5.834

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$5.251

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1,301

$5.834

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Corohmni

South Africa . 691 parts In-Stock

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$13.331

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691

$13.331

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Ampacity Inc.

Singapore . 591 parts In-Stock

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$23.500

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591

$23.500

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One Stop Electronics

USA . 1,564 parts In-Stock

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$30.500

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$30.500

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Semicontronic

India . 1,155 parts In-Stock

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$30.500

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$29.738

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$29.585

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$29.738

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Continental Prestige Electronics

USA . 6,174 parts In-Stock

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Corphita

USA . 4,727 parts In-Stock

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Argo Parts USA

USA . 2,140 parts In-Stock

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Bastille Electronics

Australia . 77 parts In-Stock

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77

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Overview

Elevate your automotive electronics with the PDRV8243HRXYQ1 by Texas Instruments. As a leading manufacturer of top-quality MOSFET Gate Drivers, Texas Instruments delivers exceptional performance and reliability. This versatile chip carrier boasts a very thin profile, making it ideal for compact designs. With a wide operating temperature range and AEC-Q100 screening level, this gate driver ensures optimal functionality in challenging automotive environments. Experience seamless operation and improved efficiency with the PDRV8243HRXYQ1 - the perfect choice for your next automotive electronics project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for internal components, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and convenient installation on PCBs, saving time and effort during production.

Maximum Supply Voltage: 35 V

Can handle high voltage requirements, making it suitable for a variety of applications.

Screening Level: AEC-Q100

Meets automotive industry standards for quality and reliability, ensuring performance in harsh environments.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold conditions, providing flexibility in deployment.

Maximum Output Current: 12 A

Capable of driving high current loads, making it versatile for different power requirements.

Technical Specifications

MOSFET Gate Drivers PDRV8243HRXYQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PQCC-N14

Length:

3 mm

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Maximum Output Current:

12 A

Nominal Output Peak Current Limit:

12 A

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

35 V

Minimum Supply Voltage:

4.5 V

Maximum Supply Voltage-1:

35 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

13.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Width:

4.5 mm

Trade Compliance

PDRV8243HRXYQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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