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PUCC21530QDWKQ1

Texas Instruments

PUCC21530QDWKQ1 by Texas Instruments

PUCC21530QDWKQ1 by Texas Instruments is a MOSFET Gate Driver with 2 channels, 6A max output current, and built-in transient & undervoltage protections. Ideal for automotive applications with AEC-Q100 screening, it operates b/w -40 to 125 °C at supply voltages ranging from 3V to 18V.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 9,525 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 242 parts In-Stock

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242

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Distributors (Availability)

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Corohmni

South Africa . 11 parts In-Stock

1+ parts

$3.910

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11

$3.910

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$9.202

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$8.742

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$8.742

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$9.202

$8.742

$8.742

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Parana Technologies

USA . 75 parts In-Stock

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$11.228

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$11.664

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75

$11.228

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$11.664

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DigiPath Technology Company

USA . 2,090 parts In-Stock

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$12.364

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$11.375

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2,090

$12.364

$11.375

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IDEA Electronic Components Group

UK . 2,242 parts In-Stock

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$12.616

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$11.985

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$11.354

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2,242

$12.616

$11.985

$11.354

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ChromeModa Solutions

Germany . 575 parts In-Stock

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$12.616

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$10.345

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575

$12.616

$10.345

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AZTECH Wire

Italy . 549 parts In-Stock

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$16.304

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549

$16.304

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Ampacity Inc.

Singapore . 920 parts In-Stock

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$20.500

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920

$20.500

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One Stop Electronics

USA . 658 parts In-Stock

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$26.500

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658

$26.500

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Semicontronic

India . 471 parts In-Stock

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$31.500

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$30.712

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$30.555

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471

$31.500

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$30.555

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Continental Prestige Electronics

USA . 3,309 parts In-Stock

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Argo Parts USA

USA . 1,992 parts In-Stock

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Corphita

USA . 1,162 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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500

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Overview

Unlock the potential of your automotive electronics with the PUCC21530QDWKQ1 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality MOSFET Gate Drivers designed for reliability and performance. This compact driver offers built-in protections, fast turn-on/off times, and a wide operating temperature range, making it ideal for a variety of applications. Trust Texas Instruments to provide you with a premium solution that enhances the efficiency and durability of your automotive systems.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good durability and reliability for the package, making it suitable for various applications.

Surface Mount: YES

Being surface-mountable allows for easy and convenient installation on PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 18 V

The high maximum supply voltage capability ensures compatibility with a wide range of power sources, increasing flexibility in design.

Built-in Protections: TRANSIENT; UNDER VOLTAGE

The built-in transient and under-voltage protections enhance the reliability and safety of the device, protecting it from potential damage.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows for reliable performance in harsh environments, making it suitable for automotive applications.

Maximum Output Current: 6 A

The high maximum output current capability enables the driver to efficiently power MOSFETs in a variety of high-current circuit applications.

No. of Channels: 2

Having two channels allows for driving multiple MOSFETs simultaneously, providing versatility in circuit design and control.

Technical Specifications

MOSFET Gate Drivers PUCC21530QDWKQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Built-in Protections:

TRANSIENT; UNDER VOLTAGE

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G14

Length:

10.3 mm

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Current Flow Direction:

SOURCE AND SINK

Maximum Output Current:

6 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

25 V

Minimum Supply Voltage-1:

14.7 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.03 us

Turn-on Time:

.03 us

Width:

7.5 mm

Trade Compliance

PUCC21530QDWKQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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