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PUCC21750QDWRQ1

Texas Instruments

PUCC21750QDWRQ1 by Texas Instruments

PUCC21750QDWRQ1 by Texas Instruments is a MOSFET gate driver with 16 terminals and a small outline package style. It operates at temperatures from -40 to 125 °C, with a supply voltage range of 3-33 V. Ideal for automotive applications requiring high side drivers with a max seated height of 2.65 mm.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,831 parts In-Stock

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Digiode

USA . 3,620 parts In-Stock

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Nova Conductors

Japan . 48 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 132 parts In-Stock

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$5.500

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132

$5.500

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$5.795

100+ parts

$5.505

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$5.505

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450

$5.795

$5.505

$5.505

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Parana Technologies

USA . 727 parts In-Stock

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$7.043

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$7.585

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727

$7.043

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DigiPath Technology Company

USA . 2,377 parts In-Stock

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$7.755

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$7.755

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ChromeModa Solutions

Germany . 4,093 parts In-Stock

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$7.913

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$6.489

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4,093

$7.913

$6.489

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IDEA Electronic Components Group

UK . 796 parts In-Stock

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$7.913

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$7.122

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796

$7.913

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$7.122

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AZTECH Wire

Italy . 510 parts In-Stock

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$13.339

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510

$13.339

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Semicontronic

India . 1,636 parts In-Stock

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$13.500

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$13.162

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$13.095

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1,636

$13.500

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$13.095

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Corohmni

South Africa . 186 parts In-Stock

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$14.176

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186

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One Stop Electronics

USA . 1,637 parts In-Stock

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$42.500

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Continental Prestige Electronics

USA . 4,698 parts In-Stock

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Argo Parts USA

USA . 1,471 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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$13.158

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$13.158

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$13.158

500

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$13.158

$13.158

$13.158

Lucentia Tech

USA . 500 parts In-Stock

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$13.158

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$13.158

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$13.158

500

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$13.158

$13.158

$13.158

Bastille Electronics

Australia . 120 parts In-Stock

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120

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Corphita

USA . 115 parts In-Stock

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Overview

Experience the unbeatable quality and reliability of the PUCC21750QDWRQ1 MOSFET gate driver from Texas Instruments. Designed with cutting-edge technology and built to meet rigorous AEC-Q100 standards, this high-performance driver is perfect for automotive applications. With a wide supply voltage range, compact package size, and dual terminal position, this driver offers unmatched flexibility and efficiency. Trust Texas Instruments to deliver superior solutions that drive innovation and exceed expectations. Elevate your projects with the PUCC21750QDWRQ1 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection, making the product suitable for various operating conditions.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on circuit boards, saving time and effort.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this gate driver can operate effectively within a safe voltage range.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality standards, making this gate driver suitable for automotive applications.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40°C allows the gate driver to function in extreme cold environments.

Technical Specifications

MOSFET Gate Drivers PUCC21750QDWRQ1 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

Additional Features:

NEG SUPPLY-NOM AT O/P SIDE IS -5V

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G16

Length:

10.3 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Screening Level:

AEC-Q100

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

7.5 mm

Trade Compliance

PUCC21750QDWRQ1 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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